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DG40Y12T2 PDF预览

DG40Y12T2

更新时间: 2024-11-30 17:01:03
品牌 Logo 应用领域
斯达半导体 - STARPOWER 双极性晶体管
页数 文件大小 规格书
9页 241K
描述
T2.0-Advanced Trench FS IGBT,Low Loss

DG40Y12T2 数据手册

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DG40Y12T2  
IGBT Discrete  
DOSEMI  
IGBT  
DG40Y12T2  
1200V/40A IGBT with Diode  
General Description  
DOSEMI IGBT Power Discrete provides ultra  
low conduction loss as well as low switching loss.  
They are designed for the applications such as  
general inverters and UPS.  
Features  
Low VCE(sat) Trench IGBT technology  
10μs short circuit capability  
Low switching loss  
Maximum junction temperature 175oC  
Low inductance case  
V
CE(sat) with positive temperature coefficient  
Fast & soft reverse recovery anti-parallel FWD  
Lead free package  
Typical Applications  
Inverter for motor drive  
AC and DC servo drive amplifier  
Uninterruptible power supply  
Equivalent Circuit Schematic  
©2018 STARPOWER Semiconductor Ltd.  
10/23/2018  
1/9  
Preliminary  

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