是否无铅: | 不含铅 | 生命周期: | Active |
零件包装代码: | DIP | 包装说明: | DIP, DIP16,.3 |
针数: | 16 | Reach Compliance Code: | unknown |
HTS代码: | 8542.39.00.01 | 风险等级: | 1.45 |
Is Samacsys: | N | 模拟集成电路 - 其他类型: | DIFFERENTIAL MULTIPLEXER |
JESD-30 代码: | R-PDIP-T16 | JESD-609代码: | e3 |
长度: | 20.13 mm | 湿度敏感等级: | 1 |
负电源电压最大值(Vsup): | -20 V | 负电源电压最小值(Vsup): | -5 V |
标称负供电电压 (Vsup): | -15 V | 信道数量: | 4 |
功能数量: | 2 | 端子数量: | 16 |
标称断态隔离度: | 75 dB | 通态电阻匹配规范: | 15 Ω |
最大通态电阻 (Ron): | 100 Ω | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | DIP | 封装等效代码: | DIP16,.3 |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
峰值回流温度(摄氏度): | 260 | 电源: | 12/+-15 V |
认证状态: | Not Qualified | 座面最大高度: | 5.08 mm |
最大信号电流: | 0.02 A | 子类别: | Multiplexer or Switches |
最大供电电流 (Isup): | 2 mA | 最大供电电压 (Vsup): | 20 V |
最小供电电压 (Vsup): | 5 V | 标称供电电压 (Vsup): | 15 V |
表面贴装: | NO | 最长断开时间: | 150 ns |
最长接通时间: | 150 ns | 切换: | BREAK-BEFORE-MAKE |
技术: | CMOS | 温度等级: | INDUSTRIAL |
端子面层: | Matte Tin (Sn) | 端子形式: | THROUGH-HOLE |
端子节距: | 2.54 mm | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 30 | 宽度: | 7.62 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
ADG609BNZ | ADI |
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