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DG309BDQ-T1 PDF预览

DG309BDQ-T1

更新时间: 2024-11-24 06:53:03
品牌 Logo 应用领域
威世 - VISHAY 复用器开关复用器或开关信号电路光电二极管
页数 文件大小 规格书
10页 133K
描述
Improved Quad CMOS Analog Switches

DG309BDQ-T1 技术参数

是否无铅:含铅生命周期:Active
零件包装代码:TSSOP包装说明:TSSOP, TSSOP16,.25
针数:16Reach Compliance Code:unknown
HTS代码:8542.39.00.01风险等级:5.29
Is Samacsys:N模拟集成电路 - 其他类型:SPST
JESD-30 代码:R-PDSO-G16JESD-609代码:e0
长度:5 mm负电源电压最大值(Vsup):-22 V
负电源电压最小值(Vsup):-4 V标称负供电电压 (Vsup):-15 V
正常位置:NC信道数量:1
功能数量:4端子数量:16
标称断态隔离度:90 dB通态电阻匹配规范:1.7 Ω
最大通态电阻 (Ron):85 Ω最高工作温度:85 °C
最低工作温度:-40 °C输出:SEPARATE OUTPUT
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装等效代码:TSSOP16,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH峰值回流温度(摄氏度):240
电源:+-15/12 V认证状态:Not Qualified
座面最大高度:1.2 mm子类别:Multiplexer or Switches
最大供电电压 (Vsup):22 V最小供电电压 (Vsup):4 V
标称供电电压 (Vsup):15 V表面贴装:YES
最长断开时间:150 ns最长接通时间:200 ns
切换:BREAK-BEFORE-MAKE技术:CMOS
温度等级:INDUSTRIAL端子面层:TIN LEAD
端子形式:GULL WING端子节距:0.65 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
宽度:4.4 mmBase Number Matches:1

DG309BDQ-T1 数据手册

 浏览型号DG309BDQ-T1的Datasheet PDF文件第2页浏览型号DG309BDQ-T1的Datasheet PDF文件第3页浏览型号DG309BDQ-T1的Datasheet PDF文件第4页浏览型号DG309BDQ-T1的Datasheet PDF文件第5页浏览型号DG309BDQ-T1的Datasheet PDF文件第6页浏览型号DG309BDQ-T1的Datasheet PDF文件第7页 
DG308B/309B  
Vishay Siliconix  
Improved Quad CMOS Analog Switches  
DESCRIPTION  
FEATURES  
22 V Supply Voltage Rating  
CMOS Compatible Logic  
The DG308B/309B analog switches are highly improved  
versions of the industry-standard DG308A/309. These  
devices are fabricated in Vishay Siliconix’ proprietary silicon  
gate CMOS process, resulting in lower on-resistance, lower  
leakage, higher speed, and lower power consumption.  
Pb-free  
Available  
Low On-Resistance - rDS(on): 45 Ω  
Low Leakage - ID(on): 20 pA  
Single Supply Operation Possible  
Extended Temperature Range  
Fast Switching - tON: < 200 ns  
Low Glitching - Q: 1 pC  
RoHS*  
COMPLIANT  
These quad single-pole single-throw switches are designed  
for a wide variety of applications in telecommunications,  
instrumentation, process control, computer peripherals, etc.  
BENEFITS  
An improved charge injection compensation design  
minimizes switching transients. The DG308B and DG309B  
can handle up to 22 V input signals. An epitaxial layer  
prevents latchup.  
Wide Analog Signal Range  
Simple Logic Interface  
Higher Accuracy  
All devices feature true bi-directional performance in the on  
condition, and will block signals to the supply levels in the off  
condition.  
Minimum Transients  
Reduced Power Consumption  
Superior to DG308A/309  
Space Savings (TSSOP)  
The DG308B is a normally open switch and the DG309B is  
a normally closed switch. (See Truth Table.)  
APPLICATIONS  
Industrial Instrumentation  
Test Equipment  
Communications Systems  
Disk Drives  
Computer Peripherals  
Portable Instruments  
Sample-and-Hold Circuits  
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION  
DG308B  
Dual-In-Line, SOIC and TSSOP  
IN  
D
IN  
2
1
1
1
1
2
3
4
5
6
7
8
16  
15  
14  
13  
12  
11  
10  
9
D
2
TRUTH TABLE  
Logic  
0
1
DG308B  
OFF  
DG309B  
ON  
S
S
2
V-  
V+  
ON  
OFF  
Logic "0" 3.5 V  
Logic "1" 11 V  
GND  
NC  
S
S
3
4
4
4
D
D
3
IN  
IN  
3
Top View  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 70047  
S-71241–Rev. F, 25-Jun-07  
www.vishay.com  
1

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