Datasheet > DG25F12T2

DG25F12T2

更新时间： 2024-09-24 17:01:59

品牌	Logo	应用领域
斯达半导体 - STARPOWER		双极性晶体管
页数	文件大小	规格书
9页	190K
描述
T2.0-Advanced Trench FS Ultra Fast IGBT Without Short-circuit Capacity

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DG25F12T2 数据手册

DG25F12T2

IGBT Discrete

DOSEMI

IGBT

DG25F12T2

1200V/25A IGBT with Diode

General Description

DOSEMI IGBT Power Discrete provides ultra

low conduction loss as well as low switching loss.

They are designed for the applications such as

electronic welder.

Features



Low V_CE(sat)Fast IGBT technology

Low switching loss

Maximum junction temperature 175^oC

TO-247

_CE(sat)with positive temperature coefficient

Fast & soft reverse recovery anti-parallel FWD

Lead free package

Typical Applications



Electronic welder

Equivalent Circuit Schematic

2/28/2017

1/9

Preliminary

12 3 4 5 6 7...9

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