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DG213DY-T1 PDF预览

DG213DY-T1

更新时间: 2024-11-26 14:49:03
品牌 Logo 应用领域
威世 - VISHAY 光电二极管输出元件
页数 文件大小 规格书
8页 87K
描述
Analog Switch Quad SPST 16-Pin SOIC N T/R

DG213DY-T1 技术参数

是否无铅: 含铅生命周期:Active
零件包装代码:SOIC包装说明:SOP, SOP16,.25
针数:16Reach Compliance Code:unknown
HTS代码:8542.39.00.01风险等级:5.3
模拟集成电路 - 其他类型:SPSTJESD-30 代码:R-PDSO-G16
JESD-609代码:e0长度:9.9 mm
负电源电压最大值(Vsup):-22 V负电源电压最小值(Vsup):-3 V
标称负供电电压 (Vsup):-15 V正常位置:NO/NC
信道数量:1功能数量:4
端子数量:16标称断态隔离度:90 dB
通态电阻匹配规范:1 Ω最大通态电阻 (Ron):60 Ω
最高工作温度:85 °C最低工作温度:-40 °C
输出:SEPARATE OUTPUT封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP16,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):240电源:5,12/+-15 V
认证状态:Not Qualified座面最大高度:1.75 mm
子类别:Multiplexer or Switches最大供电电压 (Vsup):22 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):15 V
表面贴装:YES最长断开时间:100 ns
最长接通时间:130 ns切换:BREAK-BEFORE-MAKE
技术:CMOS温度等级:INDUSTRIAL
端子面层:TIN LEAD端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30宽度:3.9 mm
Base Number Matches:1

DG213DY-T1 数据手册

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DG213  
Vishay Siliconix  
Quad Complementary CMOS Analog Switch  
FEATURES  
BENEFITS  
APPLICATIONS  
D "22-V Supply Voltage Rating  
D TTL and CMOS Compatible Logic  
D Low On-Resistance—rDS(on): 45 W  
D Low Leakage—ID(on): 20 pA  
D Single Supply Operation Possible  
D Extended Temperature Range  
D Fast Switching—tON: 85 ns  
D Low Charge Injection—Q: 1 pC  
D Wide Analog Signal Range  
D Simple Logic Interface  
D Higher Accuracy  
D Industrial Instrumentation  
D Test Equipment  
D Communications Systems  
D Computer Peripherals  
D Portable Instruments  
D Sample-and-Hold Circuits  
D Minimum Transients  
D Reduced Power Consumption  
D Low Cost  
DESCRIPTION  
The versatile DG213 analog switch has two NC and two NO  
switches. It can be used in various configurations, including  
four single-pole single-throw (SPST), two single-pole  
double-throw (SPDT), one “T” switch, one DPDT, etc. This  
injection compensation design minimizes switching  
transients. These switches can handle up to "22 V, and have  
an improved continuous current rating of 30 mA. An epitaxial  
layer prevents latchup.  
device is fabricated in  
a Vishay Siliconix’ proprietary  
high-voltage silicon gate CMOS process, resulting in lower  
on-resistance, lower leakage, higher speed, and lower power  
consumption.  
All switches feature true bi-directional performance in the on  
condition, and will block signals to the supply levels in the off  
condition.  
This analog switch was designed for a wide variety of general  
purpose applications in telecommunications, instrumentation,  
process control, computer peripherals, etc. An improved charge  
For additional information, please refer to Application Note  
AN208 (FaxBack document #70606).  
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION  
TRUTH TABLE  
IN  
D
IN  
2
Logic  
SW1, SW4  
SW2, SW3  
1
1
1
1
2
3
4
5
6
7
8
16  
15  
14  
13  
12  
11  
10  
9
0
1
OFF  
ON  
ON  
D
2
OFF  
S
S
2
Logic “0” v 0.8 V  
Logic “1” w 2.4 V  
V–  
V+  
GND  
V
L
S
3
ORDERING INFORMATION  
S
D
4
4
4
Temp Range  
Package  
Part Number  
D
3
16-Pin Plastic DIP  
16-Pin Narrow SOIC  
16-Pin TSSOP  
DG213DJ  
DG213DY  
DG213DQ  
IN  
IN  
3
–40 to 85
_
_C  
Top View  
Document Number: 70662  
S-00787—Rev. F, 17-Apr-00  
www.vishay.com S FaxBack 408-970-5600  
4-1  

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