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DG20N12T2 PDF预览

DG20N12T2

更新时间: 2024-11-28 17:01:43
品牌 Logo 应用领域
斯达半导体 - STARPOWER /
页数 文件大小 规格书
5页 449K
描述
T2.0-NPT Low Loss

DG20N12T2 数据手册

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DG20N12T2  
IGBT Discretes  
DOSEMI  
IGBT  
DG20N12T2  
Molding Type Discretes  
1200V/20A IGBT with Anti-Parallel Diode  
General Description  
DOSEMI IGBT Power Discretes provides ultra  
low conduction loss as well as short circuit ruggedness.  
They are designed for the applications such as  
general inverters and electronic welders.  
TO-247  
Features  
Low VCE(sat) NPT IGBT technology  
Low switching loss  
Maximum junction temperature 150  
10μs short circuit capability  
Square RBSOA  
V
CE(sat) with positive temperature coefficient  
Fast & soft reverse recovery anti-parallel FWD  
Tight parameter distribution  
Lead free package  
Equivalent Circuit Schematic  
Typical Applications  
Inverter for motor drive  
AC and DC servo drive amplifier  
Uninterruptible power supply  
Electronic welders  
©2012 Zhejiang Dos Technologies Ltd.  
3/29/2012  
1/5  
Preliminary  

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