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DG201HSAZ/883 PDF预览

DG201HSAZ/883

更新时间: 2024-11-26 06:53:03
品牌 Logo 应用领域
威世 - VISHAY 复用器开关复用器或开关信号电路
页数 文件大小 规格书
9页 109K
描述
High-Speed Quad SPST CMOS Analog Switch

DG201HSAZ/883 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Transferred零件包装代码:QLCC
包装说明:QCCN, LCC20,.35SQ针数:20
Reach Compliance Code:unknown风险等级:5.01
Is Samacsys:N模拟集成电路 - 其他类型:SPST
JESD-30 代码:S-XQCC-N20JESD-609代码:e0
标称负供电电压 (Vsup):-15 V正常位置:NC
功能数量:4端子数量:20
最大通态电阻 (Ron):120 Ω最高工作温度:125 °C
最低工作温度:-55 °C输出:SEPARATE OUTPUT
封装主体材料:CERAMIC封装代码:QCCN
封装等效代码:LCC20,.35SQ封装形状:SQUARE
封装形式:CHIP CARRIER电源:+-15 V
认证状态:Not Qualified筛选级别:38535Q/M;38534H;883B
子类别:Multiplexer or Switches标称供电电压 (Vsup):15 V
表面贴装:YES最长接通时间:50 ns
切换:BREAK-BEFORE-MAKE技术:CMOS
温度等级:MILITARY端子面层:Tin/Lead (Sn/Pb)
端子形式:NO LEAD端子节距:1.27 mm
端子位置:QUADBase Number Matches:1

DG201HSAZ/883 数据手册

 浏览型号DG201HSAZ/883的Datasheet PDF文件第2页浏览型号DG201HSAZ/883的Datasheet PDF文件第3页浏览型号DG201HSAZ/883的Datasheet PDF文件第4页浏览型号DG201HSAZ/883的Datasheet PDF文件第5页浏览型号DG201HSAZ/883的Datasheet PDF文件第6页浏览型号DG201HSAZ/883的Datasheet PDF文件第7页 
DG201HS  
Vishay Siliconix  
High-Speed Quad SPST CMOS Analog Switch  
FEATURES  
BENEFITS  
APPLICATIONS  
D Fast Switching—tON: 38 ns  
D Low On-Resistance: 25 W  
D Low Leakage: 100 pA  
D Faster Throughput  
D Data Acquisition  
D Higher Accuracy  
D Hi-Rel Systems  
D Reduced Pedestal Error  
D Upgrades Existing Designs  
D Simple Interfacing  
D Sample-and-Hold Circuits  
D Communication Systems  
D Automatic Test Equipment  
D Integrator Reset Circuits  
D Choppers  
D Low Charge Injection  
D TTL/CMOS Logic Compatible  
D Single Supply Compatibility  
D High Current Rating: –30 mA  
D Replaces HI201HS, ADG201HS  
D Space Savings (TSSOP)  
D Gain Switching  
D Avionics  
DESCRIPTION  
The DG201HS is an improved monolithic device containing  
four independent analog switches. It is designed to provide  
high speed, low error switching of analog signals. Combining  
low on-resistance (25 W) with high speed (tON: 38 ns), the  
DG201HS is ideally suited for high speed data acquisition  
requirements.  
To achieve high voltage ratings and superior switching  
performance, the DG201HS is built on a proprietary  
high-voltage silicon-gate process. An epitaxial layer prevents  
latchup.  
Each switch conducts equally well in both directions when on,  
and blocks input voltages to the supply values, when off.  
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION  
LCC  
Dual-In-Line, SOIC and TSSOP  
D
1
IN  
1
NC IN  
D
2
2
Key  
1
IN  
D
IN  
2
1
1
1
1
2
3
4
5
6
7
8
16  
15  
14  
13  
12  
11  
10  
9
3
2
1
20  
19  
TRUTH TABLE  
D
2
4
5
6
7
8
18  
17  
16  
S
S
2
Logic  
Switch  
ON  
S
S
2
0
1
V–  
NC  
V+  
V–  
V+  
OFF  
NC  
NC  
GND  
NC  
Logic “0” v 0.8 V  
15  
14  
GND  
Logic “1” w 2.4 V  
S
S
3
4
4
4
S
4
S
3
D
D
3
9
10  
IN  
11  
12  
13  
IN  
IN  
3
D
4
NC IN  
Top View  
D
3
4
3
Top View  
Document Number: 70038  
S-52433—Rev. F, 06-Sep-99  
www.vishay.com S FaxBack 408-970-5600  
4-1  

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