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DG2017DN-T1-E4 PDF预览

DG2017DN-T1-E4

更新时间： 2024-10-30 10:03:27
品牌 Logo 应用领域
威世 - VISHAY 复用器开关复用器或开关信号电路光电二极管输出元件
页数 文件大小 规格书
11页 187K
描述
Low-Voltage, Low RON, Dual DPDT Analog Switch

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DG2017DN-T1-E4 技术参数

是否无铅：不含铅生命周期：Not Recommended
零件包装代码：QFN包装说明：HVQCCN, LCC16,.16SQ,25
针数：16Reach Compliance Code：unknown
HTS代码：8542.39.00.01风险等级：5.64
Is Samacsys：N其他特性：VIDEO APPLICATION
模拟集成电路 - 其他类型：DPDTJESD-30 代码：S-XQCC-N16
JESD-609代码：e4长度：4 mm
湿度敏感等级：1信道数量：2
功能数量：2端子数量：16
标称断态隔离度：51 dB通态电阻匹配规范：0.3 Ω
最大通态电阻 (Ron)：3.7 Ω最高工作温度：85 °C
最低工作温度：-40 °C输出：SEPARATE OUTPUT
封装主体材料：UNSPECIFIED封装代码：HVQCCN
封装等效代码：LCC16,.16SQ,25封装形状：SQUARE
封装形式：CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE峰值回流温度（摄氏度）：260
电源：3 V认证状态：Not Qualified
座面最大高度：1 mm子类别：Multiplexer or Switches
最大供电电压 (Vsup)：5.5 V最小供电电压 (Vsup)：2 V
标称供电电压 (Vsup)：3 V表面贴装：YES
最长断开时间：48 ns最长接通时间：91 ns
切换：BREAK-BEFORE-MAKE技术：CMOS
温度等级：INDUSTRIAL端子面层：PALLADIUM GOLD OVER NICKEL
端子形式：NO LEAD端子节距：0.65 mm
端子位置：QUAD处于峰值回流温度下的最长时间：30
宽度：4 mmBase Number Matches：1

DG2017DN-T1-E4 数据手册

 浏览型号DG2017DN-T1-E4的Datasheet PDF文件第2页浏览型号DG2017DN-T1-E4的Datasheet PDF文件第3页浏览型号DG2017DN-T1-E4的Datasheet PDF文件第4页浏览型号DG2017DN-T1-E4的Datasheet PDF文件第5页浏览型号DG2017DN-T1-E4的Datasheet PDF文件第6页浏览型号DG2017DN-T1-E4的Datasheet PDF文件第7页 
DG2017  
Vishay Siliconix  
Low-Voltage, Low R , Dual DPDT Analog Switch  
ON  
FEATURES  
DESCRIPTION  
•
Halogen-free according to IEC 61249-2-21  
Definition  
The DG2017 is a dual DPDT (double-pole/double-throw),  
optimized for high performance analog switching, and  
specifically designed to benefit portable audio applications.  
• Low voltage operation (2 V to 5.5 V)  
•
•
Low on-resistance at 2.7 V - RON  
SW1, SW2 - 3.2  
:
One pair of double-throw switches is sub 1 for low  
impedance speaker performance while the second pair of  
double-throw switches is suitable for microphone  
applications.  
With the DPDT configuration, the DG2017 provides the  
flexibility for stereo-single-end or differential BTL output  
structures with a fully integrated differential microphone  
switching solution.  
SW3, SW4 - 0.64   
Fast switching: tON = 46 ns  
tOFF = 21 ns  
•
QFN-16 (4 mm x 4 mm) package  
•
Compliant to RoHS Directive 2002/95/EC  
The DG2017 is an integrated monolithic device in a QFN-16  
(4 mm x 4 mm) package that provides a space saving  
solution over the use of multiple single SPDT devices as well  
as providing the advantage of on-resistance flatness and  
matching that single SPDT devices cannot offer.  
The DG2017 provides low charge injection (2 pC), fast  
switching time (tON and tOFF less than 100 ns), excellent  
Off-Isolation and Crosstalk (- 70 dB at 100 kHz). During  
operation, continuous current through any or all switches is  
rated at 200 mA, ideal for portable audio applications.  
Built on Vishay Siliconix’s low voltage CMOS process, the  
DG2017 contains an epitaxial layer that prevents latchup.  
Break-before-make is guaranteed. When on, each switch  
conducts equally well in both directions, and block up to the  
power supply level when off.  
BENEFITS  
•
•
•
•
Space saving solution  
Low power consumption  
Guaranteed low voltage operation  
Low voltage logic compatible  
APPLICATIONS  
• Cellular Phones  
•
•
•
•
Integrated Speaker Switching  
Audio and Video Signal Routing  
PCMCIA Cards  
Battery Operated Systems  
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION  
QFN-16 (4 x 4)  
COM1 NO1  
16 15  
V+  
14  
NC4  
13  
TRUTH TABLE  
Logic  
NC1, 2, 3 and 4  
NO1, 2, 3 and 4  
0
1
ON  
OFF  
ON  
NC1  
IN1, IN2  
NO2  
COM4  
NO4  
OFF  
1
2
3
4
12  
11  
10  
9
ORDERING INFORMATION  
Temp Range  
IN3, IN4  
NC3  
Package  
Part Number  
- 40 °C to 85 °C 16-pin QFN (4 x 4 mm) DG2017DN-T1-E4  
COM2  
5
6
7
8
NC2 GND NO3 COM3  
Top View  
Document Number: 72228  
S11-1185-Rev. B, 13-Jun-11  
www.vishay.com  
1
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234567...11

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