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DG200CJ PDF预览

DG200CJ

更新时间: 2024-11-25 22:49:03
品牌 Logo 应用领域
哈里斯 - HARRIS 开关光电二极管输出元件
页数 文件大小 规格书
8页 94K
描述
CMOS Dual/Quad SPST Analog Switches

DG200CJ 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:DIP, DIP14,.3Reach Compliance Code:unknown
HTS代码:8542.39.00.01风险等级:5.19
模拟集成电路 - 其他类型:SPSTJESD-30 代码:R-PDIP-T14
JESD-609代码:e0标称负供电电压 (Vsup):-15 V
正常位置:NC信道数量:1
功能数量:2端子数量:14
标称断态隔离度:50 dB通态电阻匹配规范:30 Ω
最大通态电阻 (Ron):80 Ω最高工作温度:70 °C
最低工作温度:输出:SEPARATE OUTPUT
封装主体材料:PLASTIC/EPOXY封装代码:DIP
封装等效代码:DIP14,.3封装形状:RECTANGULAR
封装形式:IN-LINE电源:+-15 V
认证状态:Not Qualified子类别:Multiplexer or Switches
标称供电电压 (Vsup):15 V表面贴装:NO
最长断开时间:500 ns最长接通时间:1000 ns
切换:BREAK-BEFORE-MAKE技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUALBase Number Matches:1

DG200CJ 数据手册

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S E M I C O N D U C T O R  
DG200, DG201  
CMOS Dual/Quad SPST Analog Switches  
December 1993  
Features  
Description  
• Switches Greater than 28VP-P Signals with ±15 Supplies The DG200 and DG201 solid state analog gates are  
designed using an improved, high voltage CMOS monolithic  
• Break-Before-Make Switching tOFF 250ns, tON 700ns  
technology. They provide ease-of-use and performance  
Typical  
advantages not previously available from solid state  
switches. Destructive latch-up of solid state analog gates  
has been eliminated by Harris's CMOS technology.  
• TTL, DTL, CMOS, PMOS Compatible  
• Non-Latching with Supply Turn-Off  
• Complete Monolithic Construction  
• Industry Standard (DG200, DG201)  
The DG200 and DG201 are completely specification and  
pinout compatible with the industry standard devices.  
Ordering Information  
Applications  
PART NUMBER  
DG200AA  
TEMPERATURE  
PACKAGE  
o
o
-55 C to +125 C  
10 Pin Metal Can  
• Data Acquisition  
o
o
DG200AK  
-55 C to +125 C  
14 Lead Ceramic DIP  
10 Pin Metal Can  
• Sample and Hold Circuits  
• Operational Amplifier Gain Switching Networks  
o
o
DG200BA  
-25 C to +85 C  
o
o
DG200BK  
-25 C to +85 C  
14 Lead Ceramic DIP  
14 Lead Plastic DIP  
10 Pin Metal Can  
o
o
DG200CJ  
0 C to +70 C  
o
o
DG200AA/883B  
DG200AK/883B  
DG201AK  
-55 C to +125 C  
o
o
-55 C to +125 C  
14 Lead Ceramic DIP  
16 Lead Ceramic DIP  
16 Lead Ceramic DIP  
16 Lead Plastic DIP  
16 Lead Ceramic DIP  
o
o
-55 C to +125 C  
o
o
DG201BK  
-25 C to +85 C  
o
o
DG201CJ  
0 C to +70 C  
o
o
DG201AK/883B  
-55 C to +125 C  
Pinouts  
DG200  
DG200  
DG201  
(CDIP, PDIP)  
(TO-100 METAL CAN)  
(CDIP, PDIP)  
TOP VIEW  
TOP VIEW  
TOP VIEW  
V+  
(SUBSTRATE AND CASE)  
IN1  
D1  
1
2
3
4
5
6
7
8
16 IN2  
IN2  
NC  
GND  
NC  
S2  
1
2
3
4
5
6
7
14 IN1  
10  
IN1  
2
S1  
8
15 D2  
1
4
9
6
13 NC  
S1  
14 S2  
IN2  
D1  
12 V+ (SUBSTRATE)  
11 NC  
V-  
13 V+(SUBSTRATE)  
12 VREF  
11 S3  
GND  
S4  
3
7
VREF  
GND  
10 S1  
S2  
V-  
D2  
9
8
D1  
5
10 D3  
D4  
D2  
VREF  
V-  
9
IN3  
IN4  
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper I.C. Handling Procedures.  
File Number 3115  
Copyright © Harris Corporation 1993  
9-13  

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