Datasheet > DFNR1S30D

DFNR1S30D

更新时间： 2024-10-15 18:09:47

品牌	Logo	应用领域
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页数	文件大小	规格书
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描述
Reverse Voltage Vr : 30 V;Forward Current Io : 0.10 A;Max Surge Current : 2.0 A;Forward Voltage Vf : 0.46 V;Reverse Current Ir : 0.5 uA;Recovery Time : N/A;Package / Case : DFN1006;Mounting Style : SMD/SMT

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DFNR1S30D 数据手册

DFNR1S30D

SCHOTTKY BARRIER DIODE

VOLTAGE 30 Volts CURRENT 0.1 Amperes

These Schottky barrier diodes are optimized for low forward

voltage drop and low leakage current.

Features

Markets

v Mobile Handsets

v MP3 Players

v Digital Camera and Camcorders

v Notebook PCs & PDAs

v GPS

v Very Low Forward Voltage Drop − 350 mV @ 1 mA

v Low Reverse Current − 0.2 A @ 10 V

v 100 mA of Continuous Forward Current

v ESD Rating − Human Body Model: Class 3B

ESD Rating − Machine Model: Class C

v This is a Halide−Free Device

v This is a Pb−Free Device

MARKING DIAGRAM

Typical Applications

v LCD and Keypad Backlighting

v Camera Photo Flash

PIN 1

3 A

v Buck and Boost dc−dc Converters

v Reverse Voltage and Current Protection

v Clamping & Protection

Marking:3A

ꢀ

&$7+2'(

ꢁ

$12'(

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Reverse Voltage

Forward Current (DC)

Forward Surge Current

100

2.0

ꢀꢁꢂꢃꢄꢄꢅ

(60 Hz @ 1 cycle)

FSM

ESD Rating:

Human Body Model

Machine Model

ESD

>8.0

>400

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Min

Typ

Max

Unit

Thermal Resistance

Junction−to−Ambient (Note 1)

695

180

oC/W

Total Power Dissipation @ T = 25oC

Storage Temperature Range

Junction Temperature

−55 to +150

stg

1. Mounted onto a 4 in square FR−4 board 100 mm sq. 2 oz. Cu 0.06” thick single−sided. Operating to steady state.

ELECTRICAL CHARACTERISTICS (T = 25oC unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Reverse Leakage

(V = 10 V)

0.2

0.5

(V = 30 V)

Forward Voltage

(I = 1 mA)

0.35

0.46

(I = 10 mA)

Total Capacitance

0.8

(V = 5.0 V, f = 1 MHz)

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2019-09

REV:O

12 3 4

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