Datasheet > DF6F68MCTC

DF6F68MCTC

更新时间： 2024-11-09 12:55:39

品牌	Logo	应用领域
东芝 - TOSHIBA		二极管
页数	文件大小	规格书
6页	140K
描述
ESD Protection Diodes Silicon Epitaxial Planar

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DF6F68MCTC 数据手册

DF6F6.8MCTC

ESD Protection Diodes Silicon Epitaxial Planar

DF6F6.8MCTC

1. Applications

•

ESD Protection

Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other

purpose, including, but not limited to, voltage regulation.

2. Features

(1) ESD protection for up to 4 high-speed data lines and 1 Bus line.

(2) Ultra compact packaging for easy configuration in any ESD protection circuits.

(3) Low Input/output-to-ground capacitance: Ct-GND(1) = 0.6 pF (typ.).

3. Packaging and Internal Circuit Pin Assignment

1: I/O 1

2: GND

3: I/O 2

4: I/O 3

5: VBUS

6: I/O 4

CST6C

4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25)

Characteristics

Symbol

Note

Rating

Unit

Junction temperature

Storage temperature

150



Tstg

-55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2012-05-24

Rev.2.0

12 3 4 5 6

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