RoHS
DF50NA80 THRU DF50NA160
Three Phase Bridge Rectifiers
COMPLIANT
Features
● UL recognition, file #E230084
● Glass passivated chip junction
● Thin single in-line package
● High surge current capability
● Solder dip 275 °C max. 7 s, per JESD 22-B106
Typical Applications
General purpose use in AC/DC bridge full wave rectification
for switching power supply, home appliances, office
equipment, industrial automation applications.
‐
+
Mechanical Data
~
~ ~
●
ackage: TSB-5
P
Molding compound meets UL 94 V-0 flammability
rating, RoHS-compliant
● Terminals: Tin plated leads, solderable per
J-STD-002 and JESD22-B102
●
As marked on bodyꢀ
Polarity:
① ② ③ ④ ⑤
(T =25℃Unless otherwise specified
■
Maximum Ratings
)
a
DF50NA80
DF50NA80
800
DF50NA100
DF50NA100
1000
DF50NA120
DF50NA120
1200
DF50NA160
DF50NA160
1600
PARAMETER
SYMBOL UNIT
Device marking code
V
V
V
V
V
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
RRM
RMS
560
700
840
1120
V
Maximum DC blocking Voltage
800
1000
1200
1600
DC
Average Rectified Output Current
I
@60Hz sine wave, R-load, With heatsink
O
A
A
50
T =85℃
c
Forward Surge Current (Non-repetitive)
@60Hz Half-sine wave,1 cycle, Tj=25℃
Forward Surge Current (Non-repetitive)
600
1200
1494
I
FSM
I2t
@1ms, square wave, 1 cycle, Tj=25℃
Current Squared Time @1ms≤t<8.3ms
Tj=25℃,Rating of per diode
Dielectric strength
@terminals to case, AC 1 minute
Mounting torque
A2S
KV
V
dis
2.5
8
Tor
kgꞏcm
@recommend torque:5kgꞏcm
T
-55 ~ +150
-55 ~ +150
stg
℃
℃
Storage Temperature
Junction Temperature
T
j
(T =25℃Unless otherwise specified)
■Electrical Characteristics
a
DF50NA80
DF50NA100
DF50NA120
DF50NA160
PARAMETER
SYMBOL
UNIT TEST CONDITIONS
Maximum instantaneous
forward voltage drop per diode
V
V
1.1
F
I
=25.0A
FM
Maximum DC reverse current
at rated DC blocking voltage
per diode
5
T =25℃
j
I
μA
R
500
T =125℃
j
Measured at 1MHz
Typical junction capacitance
Cj
pF and Applied Reverse
Voltage of 4.0 V.D.C
190
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Yangzhou Yangjie Electronic Technology Co., Ltd.
S-B3148
Rev.1.0,23-Aug-23
www.21yangjie.com