Datasheet > DF3D6.8MS(TE85L)

DF3D6.8MS(TE85L)

更新时间： 2024-09-24 20:38:59

品牌	Logo	应用领域
东芝 - TOSHIBA		二极管
页数	文件大小	规格书
8页	234K
描述
TRANSIENT SUPPRESSOR DIODE,SINGLE,UNIDIRECTIONAL,5V V(RWM),SOT-416

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中文翻译

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技术参数
数据手册

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DF3D6.8MS(TE85L) 技术参数

是否Rohs认证：	不符合	生命周期：	Active
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.88
击穿电压标称值：	6 V	最大钳位电压：	11 V
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE	极性：	UNIDIRECTIONAL
最大重复峰值反向电压：	5 V	子类别：	Transient Suppressors
表面贴装：	YES	Base Number Matches：	1

DF3D6.8MS(TE85L) 数据手册

DF3D6.8MS

ESD Protection Diodes Silicon Epitaxial Planar

DF3D6.8MS

1. Applications

•

ESD Protection

Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other

purpose, including, but not limited to, voltage regulation.

2. Packaging and Internal Circuit

1: I/O 1

2: I/O 2

3: GND

SSM

3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25)

Characteristics

Symbol

Rating

Unit

Electrostatic discharge voltage (IEC61000-4-2)(Contact)

Junction temperature

VESD

±8

150



Storage temperature

Tstg

-55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2013-02-22

Rev.1.0

12 3 4 5 6 7 8

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