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DF3D6.8MFV PDF预览

DF3D6.8MFV

更新时间: 2024-11-21 20:05:51
品牌 Logo 应用领域
东芝 - TOSHIBA 局域网光电二极管电视
页数 文件大小 规格书
5页 116K
描述
DIODE TVS DIODE, Transient Suppressor

DF3D6.8MFV 技术参数

生命周期:Active包装说明:R-PDSO-F3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.78
最小击穿电压:6 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码:R-PDSO-F3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性:UNIDIRECTIONAL
参考标准:IEC-61000-4-5最大重复峰值反向电压:5 V
表面贴装:YES技术:AVALANCHE
端子形式:FLAT端子位置:DUAL
Base Number Matches:1

DF3D6.8MFV 数据手册

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DF3D6.8MFV  
ESD Protection Diodes Silicon Epitaxial Planar  
DF3D6.8MFV  
1. Applications  
ESD Protection  
Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other  
purpose, including, but not limited to, voltage regulation.  
2. Features  
(1) Ultra compact packaging for easy configuration in any ESD protection circuits.  
(2) Low Input/output-to-ground capacitance: Ct-GND = 0.5 pF (typ.).  
3. Packaging and Internal Circuit Pin Assignment  
1: I/O 1  
2: I/O 2  
3: GND  
VESM  
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25)  
Characteristics  
Symbol  
Note  
Rating  
Unit  
Junction temperature  
Storage temperature  
Tj  
150  
Tstg  
-55 to 150  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
2012-05-24  
Rev.2.0  
1

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