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DF2S5.1ASL PDF预览

DF2S5.1ASL

更新时间: 2024-11-06 14:56:23
品牌 Logo 应用领域
东芝 - TOSHIBA 电视
页数 文件大小 规格书
8页 317K
描述
Unidirectional TVS Diode (ESD Protection Diode), 1.5 V, SOD-962(SL2)

DF2S5.1ASL 数据手册

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DF2S5.1ASL  
ESD Protection Diodes Silicon Epitaxial Planar  
DF2S5.1ASL  
1. Applications  
ESD Protection  
Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other  
purpose, including, but not limited to, voltage regulation.  
2. Packaging and Internal Circuit  
1: Cathode  
2: Anode  
SL2  
3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25)  
Characteristics  
Symbol  
Note  
Rating  
Unit  
kV  
Electrostatic discharge voltage (IEC61000-4-2)(Contact)  
Electrostatic discharge voltage (IEC61000-4-2)(Air)  
Peak pulse power(tp = 8/20 µs)  
VESD  
(Note 1)  
±30  
PPK  
IPP  
Tj  
30  
2.5  
W
A
Peak pulse current(tp = 8/20 µs)  
Junction temperature  
(Note 2)  
150  
Storage temperature  
Tstg  
-55 to 150  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1: According to IEC61000-4-2.  
Note 2: According to IEC61000-4-5.  
Start of commercial production  
2015-11  
©2015 Toshiba Corporation  
2015-12-11  
Rev.1.0  
1

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