DF2S16ASL
ESD Protection Diodes Silicon Epitaxial Planar
DF2S16ASL
1. Applications
•
ESD Protection
Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other
purpose, including, but not limited to, voltage regulation.
2. Packaging and Internal Circuit
1: Cathode
2: Anode
SL2
3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25�)
Characteristics
Symbol
Note
Rating
Unit
kV
Electrostatic discharge voltage (IEC61000-4-2) (Contact)
Electrostatic discharge voltage (IEC61000-4-2) (Air)
Peak pulse power (tp = 8/20 µs)
VESD
(Note 1)
±12
±12
PPK
IPP
Tj
87
W
A
Peak pulse current (tp = 8/20 µs)
Junction temperature
(Note 2)
2.5
150
�
�
Storage temperature
Tstg
-55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: According to IEC61000-4-2.
Note 2: According to IEC61000-4-5.
Start of commercial production
2017-11
©2018-2022
Toshiba Electronic Devices & Storage Corporation
2022-09-07
Rev.2.0
1