Datasheet > DF2S10ASL

DF2S10ASL

更新时间： 2024-11-06 14:56:19

品牌	Logo	应用领域
东芝 - TOSHIBA		电视
页数	文件大小	规格书
8页	289K
描述
Unidirectional TVS Diode (ESD Protection Diode), 8 V, SOD-962(SL2)

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DF2S10ASL 数据手册

DF2S10ASL

ESD Protection Diodes Silicon Epitaxial Planar

DF2S10ASL

1. Applications

•

ESD Protection

Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other

purpose, including, but not limited to, voltage regulation.

2. Packaging and Internal Circuit

1: Cathode

2: Anode

SL2

3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25�)

Characteristics

Symbol

Note

Rating

Unit

Electrostatic discharge voltage (IEC61000-4-2) (Contact)

Electrostatic discharge voltage (IEC61000-4-2) (Air)

Peak pulse power (tp = 8/20 µs)

VESD

(Note 1)

±30

PPK

IPP

Peak pulse current (tp = 8/20 µs)

Junction temperature

(Note 2)

2.5

150

�

Storage temperature

Tstg

-55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: According to IEC61000-4-2.

Note 2: According to IEC61000-4-5.

Start of commercial production

2022-06

Toshiba Electronic Devices & Storage Corporation

2023-04-10

Rev.1.0

12 3 4 5 6 7 8

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