DF2B20M4SL
ESD Protection Diodes Silicon Epitaxial Planar
DF2B20M4SL
1. General
The DF2B20M4SL is a bidirectional TVS diode with high VRWM(18.5V) designed to protect high speed line or differential signal line
from the damage caused by ESD and other transients voltage. This TVS diode can protect the latter part well by the low dynamic
resistance, improve the system reliability level by the high VESD performance. It is optimum for antennal application such as NFC
for the low capacitance performance. And the small package size (0.62 mm × 0.32 mm) is ideal for high-density mounting.
2. Applications
Mobile Equipment
Smartphones
Tablets
Notebook PCs
Desktop PCs
Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other
purpose, including, but not limited to, voltage regulation.
3. Features
(1) Suitable for high working voltage line. (VRWM ≤ 18.5 V)
(2) Protects devices with its high ESD performance.
(VESD = ±15 kV (Contact / Air) @IEC61000-4-2)
(3) Low dynamic resistance protects semiconductor devices from static electricity and noise.
(RDYN = 0.2 Ω (typ.))
(4) Snapback characteristics realizing low clamping voltage protects semiconductor devices.
(VC = 26 V@IPP = 0.5 A (typ.))
(5) Compact package is suitable for use in high density board layouts such as in mobile devices.
(0.62 mm × 0.32 mm size (Toshiba package name: SL2))
4. Example of Circuit Diagram
Start of commercial production
2016-09
©2016-2018
2018-01-10
Rev.4.0
1
Toshiba Electronic Devices & Storage Corporation