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DF202SP-G PDF预览

DF202SP-G

更新时间: 2024-11-11 07:18:03
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上华 - COMCHIP /
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4页 99K
描述
SMD Glass Passivated Bridge Rectifiers

DF202SP-G 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PDSO-G4Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.76
其他特性:UL RECOGNIZED最小击穿电压:200 V
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODE最大正向电压 (VF):1.1 V
JESD-30 代码:R-PDSO-G4湿度敏感等级:1
最大非重复峰值正向电流:60 A元件数量:4
相数:1端子数量:4
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED最大重复峰值反向电压:200 V
子类别:Bridge Rectifier Diodes表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

DF202SP-G 数据手册

 浏览型号DF202SP-G的Datasheet PDF文件第2页浏览型号DF202SP-G的Datasheet PDF文件第3页浏览型号DF202SP-G的Datasheet PDF文件第4页 
SMD Glass Passivated Bridge Rectifiers  
DF2005S-G Thru. DF210S-G  
Reverse Voltage: 50 to 1000V  
Forward Current: 2.0A  
RoHS Device  
DFS  
Features  
-Rating to 1000V PRV  
0.205(5.20)  
0.197(5.00)  
-Ideal for printed circuit board  
0.335(8.50)  
0.307(7.80)  
-Low forward voltage drop,high current capability  
-
+
-Reliable low cost construction utilizing molded plastic  
technique results in inexpensive product  
-The plastic material has UL flammability  
classification 94V-0  
0.031(0.80)  
0.023(0.60)  
0.256(6.50)  
0.244(6.20)  
~
~
0.406(10.30)  
0.394(10.00)  
0.047(1.20)  
0.037(0.95)  
0.014(0.35)  
0.008(0.20)  
0.323(8.2)  
0.315(8.0)  
Mechanical Data  
0.102(2.6)  
0.087(2.2)  
-Polarit:As marked on Body  
-Weight:0.02 ounces, 0.38 grams  
-Mounting position:Any  
0.063(1.6)  
0.055(1.4)  
Dimensions in inches and (millimeter)  
Maximum ratings and electrical characteristics  
Rating at 25°C ambient temperature unless otherwise specified.  
Single phase, half wave ,60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
DF2005S-G DF201S-G DF202S-G DF204S-G DF206S-G DF208S-G DF210S-G  
Symbol  
Parameter  
Maximum Reverse Peak Repetitive Voltage  
Maximum RMS Voltage  
Unit  
VRRM  
50  
35  
50  
100  
70  
200  
140  
200  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
400  
280  
400  
VRMS  
100  
1000  
Maximum DC Blocking Voltage  
VDC  
Maximum Average Forward  
A
A
I
(AV)  
2.0  
60  
Rectified Current @T =40°C  
A
Peak Forward Surage Current ,  
8.3ms Single Half Sine-Wave  
Super Imposed on Rated Load  
IFSM  
2
I2 t  
A s  
I2 t Rating for Fusing (t8.3ms)  
10.4  
1.1  
Maximum Forward Voltage at 2.0A DC  
VF  
V
@T  
J
= 25°C  
=125°C  
Maximum DC Reverse Current  
at Rated DC Blocking Voltage  
10  
500  
μA  
IR  
@T  
J
pF  
°C/W  
°C  
25  
Typical Junction Capacitance Per Element (Note 1)  
Typical Thermal Resistance (Note 2)  
Operating Temperature Range  
C
J
R
θJA  
40  
TJ  
-55 ~ +150  
-55 ~ +150  
Storage Temperature Range  
TSTG  
°C  
Notes:  
1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC  
2. Unit mounted on P.C.B with 0.50"×0.50” (13×13mm) copper pads.  
REV: D  
Page 1  
QW-BBR47  
Comchip Technology CO., LTD.  

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