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DF160R12W2H3F_B11 PDF预览

DF160R12W2H3F_B11

更新时间: 2024-09-16 14:56:11
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
11页 722K
描述
SiC Schottky diode

DF160R12W2H3F_B11 数据手册

 浏览型号DF160R12W2H3F_B11的Datasheet PDF文件第2页浏览型号DF160R12W2H3F_B11的Datasheet PDF文件第3页浏览型号DF160R12W2H3F_B11的Datasheet PDF文件第4页浏览型号DF160R12W2H3F_B11的Datasheet PDF文件第5页浏览型号DF160R12W2H3F_B11的Datasheet PDF文件第6页浏览型号DF160R12W2H3F_B11的Datasheet PDF文件第7页 
DF160R12W2H3F_B11  
EasyPACKꢀModulꢀmitꢀschnellemꢀTrench/FeldstoppꢀHigh-Speedꢀ3ꢀIGBTꢀundꢀSiCꢀDiodeꢀundꢀPressFITꢀ/ꢀNTC  
EasyPACKꢀmoduleꢀwithꢀfastꢀTrench/FieldstopꢀHigh-Speedꢀ3ꢀIGBTꢀandꢀSiCꢀdiodeꢀandꢀPressFITꢀ/ꢀNTC  
J
VCES = 1200V  
IC nom = 160A / ICRM = 320A  
TypischeꢀAnwendungen  
TypicalꢀApplications  
• SolarꢀAnwendungen  
• Solarꢀapplications  
ElektrischeꢀEigenschaften  
• CoolSiCꢀ(TM)ꢀSchottkyꢀDiodeꢀGenꢀ5  
• HighꢀSpeedꢀIGBTꢀH3  
ElectricalꢀFeatures  
• CoolSiCꢀ(TM)ꢀSchottkyꢀdiodeꢀgenꢀ5  
• HighꢀspeedꢀIGBTꢀH3  
• NiedrigeꢀSchaltverluste  
• Lowꢀswitchingꢀlosses  
• thinQꢁHꢀSiCꢀSchottky-Diodeꢀ1200V  
• thinQꢁHꢀSiCꢀSchottkyꢀdiodeꢀ1200V  
MechanischeꢀEigenschaften  
MechanicalꢀFeatures  
• 3ꢀkVꢀACꢀ1minꢀIsolationsfestigkeit  
• 3ꢀkVꢀACꢀ1minꢀinsulation  
Al2O3 Substrat mit kleinem thermischen  
• Al2O3ꢀsubstrateꢀwithꢀlowꢀthermalꢀresistance  
Widerstand  
• IntegrierterꢀNTCꢀTemperaturꢀSensor  
• KompaktesꢀDesign  
• IntegratedꢀNTCꢀtemperatureꢀsensor  
• Compactꢀdesign  
• PressFITꢀVerbindungstechnik  
• PressFITꢀcontactꢀtechnology  
ModuleꢀLabelꢀCode  
BarcodeꢀCodeꢀ128  
ContentꢀofꢀtheꢀCode  
ModuleꢀSerialꢀNumber  
Digit  
1ꢀ-ꢀꢀꢀ5  
ModuleꢀMaterialꢀNumber  
ProductionꢀOrderꢀNumber  
Datecodeꢀ(ProductionꢀYear)  
Datecodeꢀ(ProductionꢀWeek)  
6ꢀ-ꢀ11  
12ꢀ-ꢀ19  
20ꢀ-ꢀ21  
22ꢀ-ꢀ23  
DMXꢀ-ꢀCode  
Datasheet  
PleaseꢀreadꢀtheꢀImportantꢀNoticeꢀandꢀWarningsꢀatꢀtheꢀendꢀofꢀthisꢀdocument  
Vꢀ3.0  
www.infineon.com  
2017-03-31  

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