DIODE MODULE
( )
DD KD 100HB120/160
UL;E76102(M)
Power Diode Module DD100HB series are designed for various rectifier circuits.
DD100HB has two diode chips connected in series and the mounting base is elctrically
isolated from elements for simple heatsink construction. Wide voltage rating up to,
1,600V is avaiable for various input voltage.
93.5MAX
80
2- 6.5
3
2
1
● Isolated mounting base
● Two elements in a package for simple (single and three phase) bridge
~
+
–
connections
● Highly reliable glass passivated chips
● High surge current capability
16.5
23
23
3M5
(Applications)
Various rectifiers, Battery chargers, DC motor drives
DD
2�
2�
1�
1�
3�
3�
KD
Unit:a
■Maximum Ratings
(Tj=25℃ unless otherwise specified)
Ratings
Symbol
Item
Unit
DF100HB120
1200
DD100HB160
VRRM
VRSM
Repetitive Peak Reverse Voltage
Non-Repetitive Peak Reverse Voltage
1600
1700
V
V
1350
Symbol
Item
Conditions
Ratings
100
Unit
A
IF(AV)
Average Forward Current
R.M.S. Forward Current
Surge Forward Current
Single phase, half wave, 180°conduction, Tc:111℃
F (RMS)
I
155
A
Single phase, half wave, 180°conduction, Tc:111℃
1
FSM
I
Z
A
/ cycle, 50/60H , peak value, non-repetitive
1800/2000
16500
2
2
2
2
I
I t
Value for one cycle of surge current
A S
t
Tj
Junction Temperature
Storage Temperature
Isolation Voltage
-40 to +150
-40 to +125
2500
℃
℃
V
Tstg
ISO
V
A.C.1minute
Mounting(M6) Recommended Value 2.5-3.9(25-40)
Termina(l M5) Recommended Value 1.5-2.5(15-25)
4.7(48)
2.7(28)
170
Mounting
Torque
N・m
(㎏f・B)
Mass
g
■Electrical Characteristics
Symbol
IRRM
Item
Conditions
Ratings
30
Unit
mA
V
Repetitive Peak Reverse Current, max.
Forward Voltage Drop, max.
Thermal Impedance, max.
DRM
at V , single phase, half wave. Tj=150℃
Foward current 320A,Tj=25℃,Inst. measurement
Junction to case
VFM
1.35
0.30
Rth(j-c)
℃/W
SanRex
®
50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com