Datasheet > DF10

DF10

更新时间： 2024-02-08 05:57:47

品牌	Logo	应用领域
DAESAN		/
页数	文件大小	规格书
2页	176K
描述
CURRENT 1.0 Ampere VOLTAGE 50 to 1000 Volts

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

DF10 技术参数

是否Rohs认证：	符合	生命周期：	Contact Manufacturer
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.80	风险等级：	5.76
Is Samacsys：	N	配置：	BRIDGE, 4 ELEMENTS
二极管类型：	BRIDGE RECTIFIER DIODE	最大正向电压 (VF)：	1.1 V
最大非重复峰值正向电流：	30 A	元件数量：	4
最高工作温度：	150 °C	最大输出电流：	1 A
最大重复峰值反向电压：	1000 V	子类别：	Bridge Rectifier Diodes
表面贴装：	YES	Base Number Matches：	1

DF10 数据手册

CURRENT 1.0 Ampere

VOLTAGE 50 to 1000 Volts

DF005 THRU DF10

Features

· Glass Passivated Die Construction

· Diffused Junction

· Low Forward Voltage Drop, High Current Capability

· Surge Overload Rating to 50A Peak

· Designed for Printed Circuit Board Applications

· Plastic Material - UL Flammability Classification 94V-0

Dim

Min

Max

7.90

6.50

0.30

2.03

8.90

4.69

8.51

2.60

5.20

0.58

7.40

6.20

0.22

1.27

7.60

3.81

8.13

2.40

5.00

0.46

Mechanical Data

· Case : Molded Plastic

· Terminals : Solder Plated Leads,

Solderable per MIL-STD-202, Method 208

· Polarity : As Marked on Case

· Approx. Weight : 0.38 grams

· Mounting Position : Any

· Marking : Type Number

All Dimens ions in mm

Maximum Ratings And Electrical Characteristics

(Ratings at 25℃ ambient temperature unless otherwise specified, Single phase, half wave 60Hz, resistive or inductive

load. For capacitive load, derate by 20%)

Symbols

Units

DF005 DF01 DF02 DF04 DF06 DF08 DF10

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RMM

RWM

100

200

140

400

600

420

800

560

1000

700

Volts

RMS Reverse Voltage

RMS

280

1.0

Volts

Amp

Average Rectified Output Current @ T

A=40

℃

Non-Repetitive Peak Forward Surge Current,

8.3ms single half-sine-wave superimposed

on rated load (JEDEC method)

FSM

Amps

1.1

Volts

Forward Voltage (per element)

@ IF=1.0 A

@ T

=25℃

Peak Reverse Current at Rated

DC Blocking Voltage (per element)

μA

@ T

=125℃

500

10.4

I²t Rating for Fusing (t<8.3ms)

I²t

A²

Typical Junction Capacitance

per element (Note 1)

Typical Thermal Resistance,

Junction to Ambient (Note 2)

℃/W

RθJA

STG

Operating and Storage Temperature Range

-65 to +150

℃

Notes:

(1) Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC.

(2) Thermal Resistance, junction to ambient, measured on PC board with 5.0²mm (0.03mm thick) land areas.

下载PDF

与DF10相关器件

型号	品牌	描述	获取价格	数据表
DF-10	FRONTIER	1A BRIDGE RECTIFIERS	获取价格
DF100	ETC	Norfolk Amateur Radio Club DF100 direction fi	获取价格
DF1000R17IE4	INFINEON	PrimePACK™3 Modul und NTC	获取价格
DF1000R17IE4BOSA1	INFINEON	Insulated Gate Bipolar Transistor, 1390A I(C), 1700V V(BR)CES, N-Channel, MODULE-12	获取价格
DF1000R17IE4D_B2	INFINEON	PrimePACK3 module and NTC	获取价格
DF1000R17IE4P	INFINEON	Insulated Gate Bipolar Transistor,	获取价格