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DF10

更新时间: 2024-01-12 19:40:29
品牌 Logo 应用领域
SSE /
页数 文件大小 规格书
1页 17K
描述
SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER

DF10 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.76
Is Samacsys:N配置:BRIDGE, 4 ELEMENTS
二极管类型:BRIDGE RECTIFIER DIODE最大正向电压 (VF):1.1 V
最大非重复峰值正向电流:30 A元件数量:4
最高工作温度:150 °C最大输出电流:1 A
最大重复峰值反向电压:1000 V子类别:Bridge Rectifier Diodes
表面贴装:YESBase Number Matches:1

DF10 数据手册

  
SHANGHAI SUNRISE ELECTRONICS CO., LTD.  
DF005 THRU DF10  
SINGLE PHASE GLASS  
TECHNICAL  
SPECIFICATION  
PASSIVATED BRIDGE RECTIFIER  
VOLTAGE: 50 TO 1000V CURRENT: 1.0A  
DF  
FEATURES  
• Ideal for printed circuit board  
• Reliable low cost construction utilizing  
molded plastic technique  
• Surge overload rating: 50 A peak  
• High temperature soldering guaranteed:  
250oC/10sec/ at terminals  
MECHANICAL DATA  
• Terminal: Plated leads solderable per  
MIL-STD 202E, method 208C  
• Case: UL-94 Class V-O recognized flame  
retardant epoxy  
• Polarity: Polarity symbol marked on body  
• Mounting position: Any  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
(Single-phase, half-wave, 60Hz, resistive or inductive load rating at 25oC, unless otherwise stated, for capacitive load,  
derate current by 20%)  
DF  
005  
50  
DF  
01  
DF  
02  
DF  
04  
DF  
06  
DF  
08  
DF  
10  
RATINGS  
SYMBOL  
UNITS  
VRRM  
VRMS  
VDC  
Maximum Repetitive Peak Reverse Voltage  
Maximum RMS Voltage  
100 200 400 600 800 1000  
70 140 280 420 560 700  
V
V
V
35  
Maximum DC Blocking Voltage  
50  
100 200 400 600 800 1000  
Maximum Average Forward Rectified Current  
(Ta=40oC)  
IF(AV)  
IFSM  
VF  
1.0  
A
A
V
Peak Forward Surge Current (8.3ms single  
half sine-wave superimposed on rated load)  
Maximum Instantaneous Forward Voltage  
(at forward current 1.0A)  
50  
1.1  
Ta=25oC  
10.0  
500  
Maximum DC Reverse Current  
µA  
µA  
IR  
Ta=125oC  
(at rated DC blocking voltage)  
25  
40  
CJ  
Typical Junction capacitance  
Typical Thermal Resistance  
(Note 1)  
(Note 2)  
pF  
oC/W  
oC  
Rθ(Ja)  
-55 to +150  
T
STG,TJ  
Storage and Operating Junction Temperature  
Note:  
1. Measured at 1.0 MHz and applied voltage of 4.0 Vdc  
2. Thermal Resistance from junction to Ambient mounted on P.C. Board with 13×13mm copper pads.  
http://www.sse-diode.com  

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