DF06S

更新时间： 2024-11-30 22:40:31

品牌	Logo	应用领域
上华 - COMCHIP		二极管光电二极管
页数	文件大小	规格书
2页	55K
描述
SMD Genenal Purpose Bridge Rectifier

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中文翻译

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数据手册

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DF06S 数据手册

SMD Genenal Purpose Bridge Rectifier

CCOOMMCCHHIIPP

www.comchip.com.tw

DF005S Thru DF10S

Glass Passivated Type

Reverse Voltage: 50 - 1000 Volts

Forward Current: 1.0 Amp

Features

DF-S

Ideal for surface mount applications

Easy pick and place

0.310(7.9)

0.290(7.4)

0.255(6.5)

0.245(6.2)

Plastic package has Underwriters Lab.

flammability classification 94V-0

Low forward voltage drop

Glas passivated junction

0.013(0.33)

0.003(0.08)

0.425(10.8)

0.400(10.2)

0.047(1.2)

0.039(1.0)

Mechanical data

0.347(8.8)

0.322(8.2)

0.60(1.5)

0.40(1.0)

Case: Molded plastic, DF-S

0.134(3.4)

0.118(3.0)

Terminals: solderable per MIL-STD-750,

method 2026

Polarity: Marked on body

Mounting position: Any

Approx. Weight:1.0 gram

0.205(5.2)

0.197(5.0)

Dimension in inches and (millimeters)

Maximum Ratings and Electrical Characterics

Unit

DF005S DF01S DF02S DF04S DF06S DF08S DF10S

Symbol

VRRM

VDC

Parameter

1000

700

400

280

600

420

800

560

Max. Repetitive PeakReverse Voltage

Max. DC BlockingVoltage

Max. RMS Voltage

100

200

140

VRMS

Peak Surge ForwardCurrent

8.3ms single halfsine-wave

superimposed on rateload

( JEDEC method)

IFSM

I o

V F

I R

1.0

Max. Average Forward Current

Max. Instantaneous ForwardCurrent

at 1.0 A

1.1

Max. DC ReverseCurrent at RatedDC

Ta=25

Blocking Voltage

Ta=125

500

Max. Thermal Resistance(Note 1)

Operating Junction Temperature

Storage Temperature

C/W

T j

- 5 5 t o + 1 5 0

TSTG

- 5 5 t o + 1 5 0

Note 1: Thermalresistance from junctionto ambient.

Page 1

MDS0301001B

中文翻译

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