Datasheet > DF06

DF06

更新时间： 2024-01-04 12:16:53

品牌	Logo	应用领域
SSE		/
页数	文件大小	规格书
1页	17K
描述
SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER

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技术参数
数据手册

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DF06 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	ROHS COMPLIANT, MINIATURE, PLASTIC, DFS, 4 PIN	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.56
配置：	BRIDGE, 4 ELEMENTS	二极管元件材料：	SILICON
二极管类型：	BRIDGE RECTIFIER DIODE	JESD-30 代码：	R-PDSO-G4
最大非重复峰值正向电流：	50 A	元件数量：	4
相数：	1	端子数量：	4
最高工作温度：	150 °C	最低工作温度：	-55 °C
最大输出电流：	1 A	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED	最大重复峰值反向电压：	1000 V
表面贴装：	YES	端子形式：	GULL WING
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

DF06 数据手册

SHANGHAI SUNRISE ELECTRONICS CO., LTD.

DF005 THRU DF10

SINGLE PHASE GLASS

TECHNICAL

SPECIFICATION

PASSIVATED BRIDGE RECTIFIER

VOLTAGE: 50 TO 1000V CURRENT: 1.0A

FEATURES

• Ideal for printed circuit board

• Reliable low cost construction utilizing

molded plastic technique

• Surge overload rating: 50 A peak

• High temperature soldering guaranteed:

250^oC/10sec/ at terminals

MECHANICAL DATA

• Terminal: Plated leads solderable per

MIL-STD 202E, method 208C

• Case: UL-94 Class V-O recognized flame

retardant epoxy

• Polarity: Polarity symbol marked on body

• Mounting position: Any

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

(Single-phase, half-wave, 60Hz, resistive or inductive load rating at 25^oC, unless otherwise stated, for capacitive load,

derate current by 20%)

005

RATINGS

SYMBOL

UNITS

V_RRM

V_RMS

V_DC

Maximum Repetitive Peak Reverse Voltage

Maximum RMS Voltage

100 200 400 600 800 1000

70 140 280 420 560 700

Maximum DC Blocking Voltage

100 200 400 600 800 1000

Maximum Average Forward Rectified Current

(T_a=40^oC)

I_F(AV)

I_FSM

V_F

1.0

Peak Forward Surge Current (8.3ms single

half sine-wave superimposed on rated load)

Maximum Instantaneous Forward Voltage

(at forward current 1.0A)

1.1

T_a=25^oC

10.0

500

Maximum DC Reverse Current

µA

I_R

T_a=125^oC

(at rated DC blocking voltage)

C_J

Typical Junction capacitance

Typical Thermal Resistance

(Note 1)

(Note 2)

^oC/W

^oC

R_θ(Ja)

-55 to +150

_STG,T_J

Storage and Operating Junction Temperature

Note:

1. Measured at 1.0 MHz and applied voltage of 4.0 V_dc

2. Thermal Resistance from junction to Ambient mounted on P.C. Board with 13×13mm copper pads.

http://www.sse-diode.com

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