Datasheet > DF02S

DF02S

更新时间： 2024-02-28 23:04:17

品牌	Logo	应用领域
TYSEMI		/
页数	文件大小	规格书
2页	175K
描述
Glass passivated chip junctions, Surge Overload Rating to 50A Peak

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技术参数
数据手册

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DF02S 技术参数

是否Rohs认证：	符合	生命周期：	Contact Manufacturer
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.80	风险等级：	5.76
配置：	BRIDGE, 4 ELEMENTS	二极管类型：	BRIDGE RECTIFIER DIODE
最大正向电压 (VF)：	1.1 V	最大非重复峰值正向电流：	30 A
元件数量：	4	最高工作温度：	150 °C
最大输出电流：	1 A	最大重复峰值反向电压：	200 V
子类别：	Bridge Rectifier Diodes	表面贴装：	YES
Base Number Matches：	1

DF02S 数据手册

Product specification

DF005S - DF10S

DF-S

0.205 (5.2)

0.195 (5.0)

■ Features

0.047 (1.20)

0.040 (1.02)

● Glass passivated chip junctions

● Low Forward Voltage Drop, High Current Capability

● Surge Overload Rating to 50A Peak

0.404 (10.3)

0.386 (9.80)

0.335 (8.51)

45^o

0.320 (8.13)

0.255 (6.5)

0.245 (6.2)

0.013 (0.330)

0.130 (3.3)

0.009 (0.241)

0.120 (3.05)

0.060 (1.524)

0.040 (1.016)

0.013 (0.330)

0.003 (0.076)

Dimensions in inches and (millimeters)

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol DF005S DF01S DF02S DF04S DF06S DF08S DF10S Unit

VRMM

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRWM

VDC

100

200

400

600

800

1000

RMS Reverse Voltage

VRMS

140

280

1.0

420

560

700

Average Forward Rectified Current TA=@ 40℃

Non-Repetitive Peak Forward Surge Current, 8.3 ms

Single half-sine-wave Superimposed on Rated Load

(JEDECmethod)

IFSM

1.1

Forward Voltage (per element) @ IF = 1.0A

500

Reverse Current(per element) @ Rated VR ,

TA = 25℃

TA = 125℃

μA

I²t

A²s

Rating for fusing (t < 8.3ms)

Typical Total Capacitance (per element) (Note 1)

Typical Thermal Resistance, Junction to Ambient (Note 2)

Operating and Storage Temperature Range

RθJA

Tj, Tstg

℃/W

℃

-55 to +150

Notes: 1. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V DC.

2.Device mounted on PCB with 0.5 × 0.5” (13 × 13mm).

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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