DF005M, DF01M, DF02M, DF04M, DF06M, DF08M, DF10M
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Vishay General Semiconductor
Miniature Glass Passivated Single-Phase Bridge Rectifiers
FEATURES
• UL recognition, file number E54214
• Ideal for printed circuit boards
• Applicable for automative insertion
• High surge current capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
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• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
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TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
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for SMPS, lighting ballaster, adapter, battery charger, home
appliances, office equipment, and telecommunication
applications.
Case Style DFM
PRIMARY CHARACTERISTICS
Package
DFM
1 A
MECHANICAL DATA
IF(AV)
Case: DFM
50 V, 100 V, 200 V, 400 V, 600 V,
800 V, 1000 V
VRRM
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
IFSM
IR
50 A
5 μA
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
VF at IF = 1.0 A
TJ max.
1.1 V
150 °C
Quad
Polarity: As marked on body
Diode variations
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL DF005M DF01M DF02M DF04M DF06M DF08M DF10M UNIT
Device marking code
DF005
50
DF01
100
70
DF02
200
DF04
400
DF06
600
DF08
800
DF10
1000
700
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
V
V
V
35
140
280
420
560
Maximum DC blocking voltage
50
100
200
400
600
800
1000
Maximum average forward output rectified current
at TA = 40 °C
IF(AV)
1.0
50
A
Peak forward surge current single sine-wave
superimposed on rated load
IFSM
I2t
A
Rating for fusing (t < 8.3 ms)
10
A2s
°C
Operating junction and storage temperature range TJ, TSTG
- 55 to + 150
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS SYMBOL DF005M DF01M DF02M DF04M DF06M DF08M DF10M UNIT
Maximum instantaneous
forward voltage drop per diode
1.0 A
VF
IR
1.1
V
Maximum reverse current at
rated DC blocking voltage per
diode
TA = 25 °C
5.0
μA
pF
TA = 125 °C
500
Typical junction capacitance
per diode
4.0 V, 1 MHz
CJ
25
Revision: 16-Aug-13
Document Number: 88571
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000