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DE28F800B3T150 PDF预览

DE28F800B3T150

更新时间： 2024-01-10 21:06:04
品牌 Logo 应用领域
英特尔 - INTEL 闪存
页数 文件大小 规格书
47页 274K
描述
FAST BOOT BLOCK FLASH MEMORY FAMILY 8 AND 16 MBIT

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DE28F800B3T150 技术参数

是否Rohs认证： 不符合生命周期：Transferred
零件包装代码：SSOP包装说明：SSOP, BGA56,10X6,30
针数：56Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8542.32.00.51
风险等级：5.7最长访问时间：150 ns
其他特性：TOP BOOT BLOCK启动块：TOP
命令用户界面：YES数据轮询：NO
JESD-30 代码：R-PDSO-G56JESD-609代码：e0
长度：23.7 mm内存密度：8388608 bit
内存集成电路类型：FLASH内存宽度：16
功能数量：1部门数/规模：8,15
端子数量：56字数：524288 words
字数代码：512000工作模式：ASYNCHRONOUS
最高工作温度：125 °C最低工作温度：-40 °C
组织：512KX16封装主体材料：PLASTIC/EPOXY
封装代码：SSOP封装等效代码：BGA56,10X6,30
封装形状：RECTANGULAR封装形式：SMALL OUTLINE, SHRINK PITCH
并行/串行：PARALLEL电源：3.3 V
编程电压：3 V认证状态：Not Qualified
座面最大高度：1.9 mm部门规模：4K,32K
最大待机电流：0.00006 A子类别：Flash Memories
最大压摆率：0.075 mA最大供电电压 (Vsup)：3.6 V
最小供电电压 (Vsup)：3 V标称供电电压 (Vsup)：3.3 V
表面贴装：YES技术：CMOS
温度等级：AUTOMOTIVE端子面层：Tin/Lead (Sn/Pb)
端子形式：GULL WING端子节距：0.8 mm
端子位置：DUAL切换位：NO
类型：NOR TYPE宽度：13.3 mm
Base Number Matches：1

DE28F800B3T150 数据手册

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PRODUCT PREVIEW  
E
FAST BOOT BLOCK  
FLASH MEMORY FAMILY  
8 AND 16 MBIT  
28F800F3, 28F160F3  
Includes Extended and Automotive Temperature Specifications  
High Performance  
Supports Code Plus Data Storage  
Optimized for Flash Data Integrator  
(FDI) Software  
54 MHz Effective Zero Wait-State  
Performance  
Synchronous Burst-Mode Reads  
Asynchronous Page-Mode Reads  
Fast Program Suspend Capability  
Fast Erase Suspend Capability  
SmartVoltage Technology  
Flexible Blocking Architecture  
Eight 4-Kword Blocks for Data  
32-Kword Main Blocks for Code  
Top or Bottom Configurations  
Available  
2.7 V−3.6 V Read and Write  
Operations for Low Power Designs  
12 V VPP Fast Factory Programming  
Flexible I/O Voltage  
1.65 V I/O Reduces Overall System  
Power Consumption  
5 V-Safe I/O Enables Interfacing to  
5 V Devices  
Extended Cycling Capability  
Minimum 10,000 Block Erase Cycles  
Guaranteed  
Low Power Consumption  
Enhanced Data Protection  
Absolute Write Protection with  
VPP = GND  
Automatic Power Savings Mode  
Decreases Power Consumption  
Automated Program and Block Erase  
Algorithms  
Block Locking  
Block Erase/Program Lockout  
during Power Transitions  
Command User Interface for  
Automation  
Density Upgrade Path  
8- and 16-Mbit  
Status Register for System  
Feedback  
Manufactured on ETOX™ V Flash  
Technology  
Industry-Standard Packaging  
56-Lead SSOP  
µBGA* CSP  
Intel’s Fast Boot Block memory family renders high performance asynchronous page-mode and synchronous  
burst reads making it an ideal memory solution for burst CPUs. Combining high read performance with the  
intrinsic non-volatility of flash memory, this flash memory family eliminates the traditional redundant memory  
paradigm of shadowing code from a slow nonvolatile storage source to a faster execution memory for  
improved system performance. Therefore, it reduces the total memory requirement which helps increase  
reliability and reduce overall system power consumption and cost.  
This family of products is manufactured on Intel’s 0.4 µm ETOX™ V process technology. They are available  
in industry-standard packages: the µBGA* CSP, ideal for board-constrained applications, and the rugged  
56-lead SSOP.  
May 1998  
Order Number: 290644-001  
1234567...47

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DE28F800F3B125 INTEL Flash, 512KX16, 30ns, PDSO56, 16 X 23.70 MM, SSOP-56

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DE28F800F3B95 INTEL Flash, 512KX16, 95ns, PDSO56, 16 X 23.70 MM, SSOP-56

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DE28F800F3T115 ROCHESTER 512KX16 FLASH 3V PROM, 19ns, PDSO56, 16 X 23.70 MM, SSOP-56

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DE28F800F3T115 INTEL Flash, 512KX16, 19ns, PDSO56, 16 X 23.70 MM, SSOP-56

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DE28F800F3T125 INTEL Flash, 512KX16, 30ns, PDSO56, 16 X 23.70 MM, SSOP-56

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