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DDTC115TUA-7 PDF预览

DDTC115TUA-7

更新时间: 2024-02-19 11:05:39
品牌 Logo 应用领域
美台 - DIODES 晶体小信号双极晶体管光电二极管
页数 文件大小 规格书
3页 188K
描述
NPN PRE-BIASED SMALL SIGNAL SOT-323 DUAL SURFACE MOUNT TRANSISTOR

DDTC115TUA-7 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
Factory Lead Time:19 weeks风险等级:1.11
其他特性:BUILT-IN BIAS RESISTOR最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):100JESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
最大功率耗散 (Abs):0.2 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管元件材料:SILICON标称过渡频率 (fT):250 MHz
Base Number Matches:1

DDTC115TUA-7 数据手册

 浏览型号DDTC115TUA-7的Datasheet PDF文件第2页浏览型号DDTC115TUA-7的Datasheet PDF文件第3页 
DDTC (R1-ONLY SERIES) UA  
NPN PRE-BIASED SMALL SIGNAL SOT-323  
SURFACE MOUNT TRANSISTOR  
Features  
·
Epitaxial Planar Die Construction  
SOT-323  
·
Complementary PNP Types Available  
A
Dim  
A
Min  
0.25  
1.15  
2.00  
Max  
0.40  
1.35  
2.20  
(DDTA)  
C
·
Built-In Biasing Resistor, R1 only  
B
C
B
Mechanical Data  
C
E
B
D
·
·
·
·
Case: SOT-323, Molded Plastic  
Case Material - UL Flammability Rating 94V-0  
Moisture sensitivity: Level 1 per J-STD-020A  
Terminals: Solderable per MIL-STD-202,  
Method 208  
Terminal Connections: See Diagram  
Marking: Date Code and Marking Code  
(See Diagrams & Page 2)  
0.65 Nominal  
G
H
E
0.30  
1.20  
1.80  
0.0  
0.40  
1.40  
2.20  
0.10  
1.00  
0.40  
0.18  
8°  
G
H
K
M
J
·
·
J
L
D
F
K
0.90  
0.25  
0.10  
0°  
L
·
·
Weight: 0.006 grams (approx.)  
Ordering Information (See Page 2)  
M
a
All Dimensions in mm  
C
R
1
B
P/N  
R1 (NOM)  
MARKING  
DDTC113TUA  
DDTC123TUA  
DDTC143TUA  
DDTC114TUA  
DDTC124TUA  
DDTC144TUA  
DDTC115TUA  
DDTC125TUA  
1KW  
2.2KW  
4.7KW  
10KW  
22KW  
47KW  
100KW  
200KW  
N01  
N03  
N07  
N12  
N16  
N19  
N23  
N25  
E
SCHEMATIC DIAGRAM  
@ TA = 25°C unless otherwise specified  
Maximum Ratings  
Characteristic  
Symbol  
VCBO  
Value  
Unit  
V
Collector-Base Voltage  
50  
VCEO  
Collector-Emitter Voltage  
50  
5
V
VEBO  
Emitter-Base Voltage  
V
IC (Max)  
Pd  
Collector Current  
100  
mA  
mW  
°C/W  
°C  
Power Dissipation  
200  
R
qJA  
Thermal Resistance, Junction to Ambient Air (Note 1)  
Operating and Storage and Temperature Range  
833  
Tj, TSTG  
-55 to +150  
Note:  
1. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.  
DS30323 Rev. 2 - 1  
1 of 3  
DDTC (R1-ONLY SERIES) UA  

DDTC115TUA-7 替代型号

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DDTC115TUA-7 DIODES

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Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC