Technische Information / Technical Information
Netz-Dioden-Modul
Rectifier Diode Module
DD B6U 85 N 16 (ISOPACK)
N
B6
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Tvj = - 40°C...Tvj max
Tvj = + 25°C...Tvj max
VRRM
VRSM
IFRMSM
Id
Periodische Spitzensperrspannung
repetitive peak reverse voltage
1600
1700
60
V
V
A
Stoßspitzensperrspannung
non-repetitive peak reverse voltage
Durchlaßstrom-Grenzeffektivwert (pro Element)
RMS forward current (per chip)
TC = 100°C
TC = 84°C
TA = 45°C, KM 11
TA = 45°C, KM 33
TA = 35°C, KM 14 (VL = 45l/s)
TA = 35°C, KM 33 (VL = 90l/s)
Ausgangsstrom
output current
85
104
58
75
104
104
A
A
A
A
A
A
Tvj = 25°C, tp = 10ms
Tvj = Tvj max, tp = 10ms
IFSM
Stoßstrom-Grenzwert
surge forward current
650
550
A
A
Tvj = 25°C, tp = 10ms
Tvj = Tvj max, tp = 10ms
Grenzlastintegral
I²t-value
I²t
2100
1500
A²s
A²s
Charakteristische Werte / Characteristic values
Tvj = Tvj max, iF = 100A
vF
Durchlaßspannung
forward voltage
max. 1,44
0,75
V
Tvj = Tvj max
V(TO)
Schleusenspannung
threshold voltage
V
Tvj = Tvj max
rT
Ersatzwiderstand
forward slope resistance
5,5
mΩ
mA
Tvj = Tvj max,vR = VRRM
iR
Sperrstrom
max.
5
reverse current
VISOL
RMS, f = 50Hz, t = 1min
RMS, f = 50Hz, t = 1sec
Isolations-Prüfspannung
insulation test voltage
3,0
3,6
kV
kV
Thermische Eigenschaften / Thermal properties
RthJC
pro Modul / per module, Θ = 120°rect
pro Element / per chip, Θ = 120°rect
pro Modul / per module, DC
Innerer Wärmewiderstand
thermal resistance, junction to case
max. 0,241
max. 1,450
max. 0,183
max. 1,100
°C/W
°C/W
°C/W
°C/W
pro Element / per chip, DC
RthCK
Tvj max
Tc op
Tstg
pro Modul / per module
pro Element / per chip
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
max. 0,033
max. 0,200
°C/W
°C/W
Höchstzulässige Sperrschichttemperatur
max. junction temperature
150
- 40...+150
- 40...+150
°C
°C
°C
Betriebstemperatur
operating temperature
Lagertemperatur
storage temperature
BIP PPE4 rev. 2
24. Okt 05
A07 /05
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