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DDB6U85N16L PDF预览

DDB6U85N16L

更新时间: 2024-11-05 12:52:43
品牌 Logo 应用领域
英飞凌 - INFINEON 整流二极管
页数 文件大小 规格书
7页 337K
描述
Rectifier Diode Module

DDB6U85N16L 数据手册

 浏览型号DDB6U85N16L的Datasheet PDF文件第2页浏览型号DDB6U85N16L的Datasheet PDF文件第3页浏览型号DDB6U85N16L的Datasheet PDF文件第4页浏览型号DDB6U85N16L的Datasheet PDF文件第5页浏览型号DDB6U85N16L的Datasheet PDF文件第6页浏览型号DDB6U85N16L的Datasheet PDF文件第7页 
Technische Information / Technical Information  
Netz-Dioden-Modul  
Rectifier Diode Module  
DD B6U 85 N 16 (ISOPACK)  
N
B6  
Elektrische Eigenschaften / Electrical properties  
Höchstzulässige Werte / Maximum rated values  
Tvj = - 40°C...Tvj max  
Tvj = + 25°C...Tvj max  
VRRM  
VRSM  
IFRMSM  
Id  
Periodische Spitzensperrspannung  
repetitive peak reverse voltage  
1600  
1700  
60  
V
V
A
Stoßspitzensperrspannung  
non-repetitive peak reverse voltage  
Durchlaßstrom-Grenzeffektivwert (pro Element)  
RMS forward current (per chip)  
TC = 100°C  
TC = 84°C  
TA = 45°C, KM 11  
TA = 45°C, KM 33  
TA = 35°C, KM 14 (VL = 45l/s)  
TA = 35°C, KM 33 (VL = 90l/s)  
Ausgangsstrom  
output current  
85  
104  
58  
75  
104  
104  
A
A
A
A
A
A
Tvj = 25°C, tp = 10ms  
Tvj = Tvj max, tp = 10ms  
IFSM  
Stoßstrom-Grenzwert  
surge forward current  
650  
550  
A
A
Tvj = 25°C, tp = 10ms  
Tvj = Tvj max, tp = 10ms  
Grenzlastintegral  
I²t-value  
I²t  
2100  
1500  
A²s  
A²s  
Charakteristische Werte / Characteristic values  
Tvj = Tvj max, iF = 100A  
vF  
Durchlaßspannung  
forward voltage  
max. 1,44  
0,75  
V
Tvj = Tvj max  
V(TO)  
Schleusenspannung  
threshold voltage  
V
Tvj = Tvj max  
rT  
Ersatzwiderstand  
forward slope resistance  
5,5  
m  
mA  
Tvj = Tvj max,vR = VRRM  
iR  
Sperrstrom  
max.  
5
reverse current  
VISOL  
RMS, f = 50Hz, t = 1min  
RMS, f = 50Hz, t = 1sec  
Isolations-Prüfspannung  
insulation test voltage  
3,0  
3,6  
kV  
kV  
Thermische Eigenschaften / Thermal properties  
RthJC  
pro Modul / per module, Θ = 120°rect  
pro Element / per chip, Θ = 120°rect  
pro Modul / per module, DC  
Innerer Wärmewiderstand  
thermal resistance, junction to case  
max. 0,241  
max. 1,450  
max. 0,183  
max. 1,100  
°C/W  
°C/W  
°C/W  
°C/W  
pro Element / per chip, DC  
RthCK  
Tvj max  
Tc op  
Tstg  
pro Modul / per module  
pro Element / per chip  
Übergangs-Wärmewiderstand  
thermal resistance, case to heatsink  
max. 0,033  
max. 0,200  
°C/W  
°C/W  
Höchstzulässige Sperrschichttemperatur  
max. junction temperature  
150  
- 40...+150  
- 40...+150  
°C  
°C  
°C  
Betriebstemperatur  
operating temperature  
Lagertemperatur  
storage temperature  
BIP PPE4 rev. 2  
24. Okt 05  
A07 /05  
Seite/page 1(6)  

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