Datasheet > DD400S33K2

DD400S33K2

更新时间： 2024-11-10 23:46:39

品牌	Logo	应用领域
其他 - ETC		双极性晶体管
页数	文件大小	规格书
6页	73K
描述
IGBT Module

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

DD400S33K2 数据手册

Technische Information / Technical Information

IGBT-Module

IGBT-Modules

DD 400 S 33 K2

Datenblatt

datasheet

Höchstzulässige Werte / Maximum rated values

Elektrische Eigenschaften / Electrical properties

V_R

Periodische Spitzensperrspannung

3300

T_j= 25°C

T_j= -25°C

repetitive peak reverse voltage

Dauergleichstrom

DC forward current

I_F

400

800

Periodischer Spitzenstrom

repetitive peak forw. current

_P= 1 ms

I_FRM

Grenzlastintegral der Diode

I²t - value, Diode

I²t

A²s

V_R= 0V, t_p= 10ms, T_Vj= 125°C

T_j= 125°C

55.600

400

Spitzenverlustleistung der Diode

maximum power dissipation diode

P_RQM

V_ISOL

Isolations-Prüfspannung

insulation test voltage

RMS, f = 50 Hz, t = 1 min.

6.000

2.600

Teilentladungs-Aussetzspannung

partial discharge extinction voltage

RMS, f = 50 Hz, Q_PD≤ 10 pC (acc. to IEC 1287)

Charakteristische Werte / Characteristic values

min. typ. max.

Diode / Diode

I_F= 400 A, V_GE= 0V, T_vj= 25°C

Durchlaßspannung

V_F

2,80

0,005

3,50

0,8

forward voltage

I_F= 400 A, V_GE= 0V, T_vj= 125°C

V_CE= 3300V, T_vj= 25°C

Sperrstrom

I_R

reverse current

V_CE= 3300V, T_vj= 125°C

I_F= 400 A, - di_F/dt = 1200 A/µsec

Rückstromspitze

peak reverse recovery current

_R= 1800V, VGE = -10V, T_vj= 25°C

V_R= 1800V, VGE = -10V, T_vj= 125°C

_F= 400 A, - di_F/dt = 1200 A/µsec

_R= 1800V, VGE = -10V, T_vj= 25°C

V_R= 1800V, VGE = -10V, T_vj= 125°C

_F= 400 A, - di_F/dt = 1200 A/µsec

_R= 1800V, VGE = -10V, T_vj= 25°C

I_RM

330

350

Sperrverzögerungsladung

recovered charge

Q_r

235

440

µAs

Abschaltenergie pro Puls

reverse recovery energy

E_rec

245

500

mWs

V_R= 1800V, VGE = -10V, T_vj= 125°C

Modulinduktivität

stray inductance module

L_sCE

pro Diode / per diode

Modul-Leitungswiderstand, Anschlüsse - Chip

lead resistance, terminals - chip

R_CC’+EE’

T = 25°C, pro Diode / per diode

0,39

mΩ

prepared by: Jürgen Göttert

date of publication : 08.06.99

revision: 2

approved by: Chr. Lübke: 04.10.99

Datenblatt DD 400 S 33 K2

04.10.99

1 (6)

12 3 4 5 6

中文翻译

下载PDF

与DD400S33K2相关器件

型号	品牌	获取价格	描述	数据表
DD400S33K2C	EUPEC	获取价格	IGBT-modules
DD400S33K2CB3NDSA1	INFINEON	获取价格	Rectifier Diode,
DD400S33K2CNOSA1	INFINEON	获取价格	Rectifier Diode, 1 Phase, 2 Element, 400A, 3300V V(RRM), Silicon, MODULE-4
DD400S45KL3_B5	INFINEON	获取价格	Technische Information / Technical Information
DD400S65K1	INFINEON	获取价格	IGBT-Module
DD400S65K1	EUPEC	获取价格	Dioden-Module
DD405	MURATA	获取价格	CAPACITOR, CERAMIC, 16; 25V, THROUGH HOLE MOUNT, RADIAL LEADED
DD406	MURATA	获取价格	CAPACITOR, CERAMIC, 16; 25V, THROUGH HOLE MOUNT, RADIAL LEADED
DD408	MURATA	获取价格	CAPACITOR, CERAMIC, 25V, THROUGH HOLE MOUNT, RADIAL LEADED
DD40F	SANREX	获取价格	DIODE MODULE