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DD28F032SA-070 PDF预览

DD28F032SA-070

更新时间： 2024-09-25 22:35:55
品牌 Logo 应用领域
英特尔 - INTEL 闪存存储内存集成电路光电二极管
页数 文件大小 规格书
49页 725K
描述
32-MBIT (2 MBIT X 16, 4 MBIT X 8) FlashFile MEMORY

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中文翻译

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DD28F032SA-070 技术参数

生命周期：Obsolete零件包装代码：TSOP
包装说明：14 X 20 MM, 1.20 MM HEIGHT, TSOP-56针数：56
Reach Compliance Code：unknownECCN代码：3A991.B.1.A
HTS代码：8542.32.00.51风险等级：5.83
Is Samacsys：N最长访问时间：70 ns
其他特性：ALSO CONFIGURABLE AS 2M X 16JESD-30 代码：R-PDSO-G56
长度：18.4 mm内存密度：33554432 bit
内存集成电路类型：FLASH内存宽度：8
功能数量：1端子数量：56
字数：4194304 words字数代码：4000000
工作模式：ASYNCHRONOUS最高工作温度：70 °C
最低工作温度：组织：4MX8
输出特性：3-STATE封装主体材料：PLASTIC/EPOXY
封装代码：TSOP1封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, THIN PROFILE并行/串行：PARALLEL
编程电压：12 V认证状态：Not Qualified
座面最大高度：1.2 mm最大供电电压 (Vsup)：5.25 V
最小供电电压 (Vsup)：4.75 V标称供电电压 (Vsup)：5 V
表面贴装：YES技术：MOS
温度等级：COMMERCIAL端子形式：GULL WING
端子节距：0.5 mm端子位置：DUAL
类型：NOR TYPE宽度：14 mm
Base Number Matches：1

DD28F032SA-070 数据手册

 浏览型号DD28F032SA-070的Datasheet PDF文件第2页浏览型号DD28F032SA-070的Datasheet PDF文件第3页浏览型号DD28F032SA-070的Datasheet PDF文件第4页浏览型号DD28F032SA-070的Datasheet PDF文件第5页浏览型号DD28F032SA-070的Datasheet PDF文件第6页浏览型号DD28F032SA-070的Datasheet PDF文件第7页 
E
DD28F032SA  
32-MBIT (2 MBIT X 16, 4 MBIT X 8)  
FlashFile™ MEMORY  
User-Selectable 3.3V or 5V VCC  
Revolutionary Architecture  
100% Backwards-Compatible with  
Intel 28F016SA  
User-Configurable x8 or x16 Operation  
70 ns Maximum Access Time  
Pipelined Command Execution  
Program during Erase  
28.6 MB/sec Burst Write Transfer Rate  
1 Million Typical Erase Cycles per Block  
2 mA Typical ICC in Static Mode  
2 µA Typical Deep Power-Down  
56-Lead, 1.2 x 14 x 20 mm Advanced  
Dual Die TSOP Package Technology  
State-of-the-Art 0.6 µm ETOX™ IV Flash  
Technology  
64 Independently Lockable Blocks  
Intel’s DD28F032SA 32-Mbit FlashFile™ memory is a revolutionary architecture which enables the design of  
truly mobile, high performance, personal computing and communication products. With innovative  
capabilities, low power operation and very high read/program performance, the DD28F032SA is also the ideal  
choice for designing embedded mass storage flash memory systems.  
The DD28F032SA is the result of highly-advanced packaging innovation which encapsulates two 28F016SA  
die in a single Dual Die Thin Small Outline Package (DDTSOP).  
The DD28F032SA is the highest density, highest performance nonvolatile read/program solution for solid-  
state storage applications. Its symmetrically-blocked architecture (100% compatible with the 28F016SA  
16-Mbit FlashFile memory), very high-cycling, low-power 3.3V operation, very fast program and read  
performance and selective block locking provide a highly flexible memory component suitable for high-density  
memory cards, Resident Flash Arrays and PCMCIA-ATA Flash Drives. The DD28F032SA’s dual read voltage  
enables the design of memory cards which can be read/written in 3.3V and 5.0V systems interchangeably. Its  
x8/x16 architecture allows the optimization of memory to processor interface. The flexible block locking option  
enables bundling of executable application software in a Resident Flash Array or memory card. The  
DD28F032SA will be manufactured on Intel’s 0.6 µm ETOX IV technology.  
December 1996  
Order Number: 290490-005  
1234567...49

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