DIODE MODULE
DD200GB
UL;E76102(M)
Power Diode Module DD200GB series are designed for various rectifier circuits.
DD200GB has two diode two diode chips connecected in series and the mounting base is
electrically isolated from elements for simple heatsink construction. Wide voltage rating
up to 800V is available for various input voltages.
92±0.5
26 26
12
4-φ6(M5)�
●
Isolated mounting base
● Two elements in a package for simple(single and three phase)bridge
connections
● Highly reliable glass passivated chips
● High surge current capability
18
2
R8.0
M8×14
(Applications)
Various rectifiers, Battery chargers, DC motor drives
DD
80±0.3
1�
2�
3�
Unit:㎜
■Maximum Ratings
(Tj=25℃ unless otherwise specified)
Ratings
Symbol
Item
Unit
DD200GB40
DD200GB80
VRRM
VRSM
Repetitive Peak Reverse Voltage
Non-Repetitive Peak Reverse Voltage
400
480
800
960
V
V
Symbol
IF(AV)
Item
Conditions
Ratings
200
Unit
A
Average Forward Current
R.M.S. Forward Current
Surge Forward Current
Single phase, half wave, 180℃conduction, Tc: 96℃
IF(RMS)
310
A
Single phase, half wave, 180℃conduction, Tc: 96℃
1
IFSM
Z
A
/ cycle, 50/60H , peak value, non-repetitive
5000/5500
125000
2
2
2
2
I
I t
Value for one cycle of surge current
A S
t
Tj
Operating Junction Temperature
Storage Temperature
-40 to +150
-40 to +125
2500
℃
℃
V
Tstg
VISO
A.C. 1 minute
Isolation Breakdown Voltage(R.M.S.)
Mounting(M5) Recommended Value 1.5-2.5(15-25)
Termina(l M8) Recommended Value 8.8-10 (90-105)
Typical Value
2.7(28)
11(115)
510
Mounting
Torque
N・m
(㎏f・B)
Mass
g
■Electrical Characteristics
(Tj=25℃ unless otherwise specified)
Symbol
IRRM
Item
Conditions
Ratings
50
Unit
mA
V
Repetitive Peak Reverse Current, max.
Forward Voltage Drop, max.
Thermal Impedance, max.
RRM
j
at V . Single phase, half wave, T =150℃
VFM
j
1.40
Forward current 600A, T =25℃, Inst measurement
0.18
Rth(j-c)
Junction to case (Per a half module)
℃/W
SanRex
®
50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com