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DD1200S33K2C PDF预览

DD1200S33K2C

更新时间: 2024-09-24 15:44:59
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
6页 162K
描述
Rectifier Diode, 1 Phase, 2 Element, 1200A, 3300V V(RRM), Silicon, MODULE-4

DD1200S33K2C 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:MODULE
包装说明:R-XUFM-X4针数:4
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.67
应用:GENERAL PURPOSE外壳连接:ISOLATED
配置:SEPARATE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):3.5 V
JESD-30 代码:R-XUFM-X4元件数量:2
相数:1端子数量:4
最高工作温度:125 °C最低工作温度:-40 °C
最大输出电流:1200 A封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:3300 V子类别:Other Diodes
表面贴装:NO端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

DD1200S33K2C 数据手册

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Technische Information / technical information  
IGBT-Module  
IGBT-modules  
DD1200S33K2C  
Diode-Wechselrichter / diode-inverter  
chstzulässige Werte / maximum rated values  
Periodische Spitzensperrspannung  
repetitive peak reverse voltage  
TÝÎ = 25°C  
TÝÎ = -25°C  
3300  
3300  
Vçç¢  
IŒ  
V
A
Dauergleichstrom  
DC forward current  
1200  
2400  
500  
Periodischer Spitzenstrom  
repetitive peak forward current  
t« = 1 ms  
IŒç¢  
I²t  
A
Grenzlastintegral  
I²t - value  
Vç = 0 V, t« = 10 ms, TÝÎ = 125°C  
TÝÎ = 125°C  
kA²s  
kW  
µs  
Spitzenverlustleistung  
maximum power dissipation  
P笢  
tÓÒ ÑÍÒ  
2400  
10,0  
Mindesteinschaltdauer  
minimum turn-on time  
Charakteristische Werte / characteristic values  
min. typ. max.  
Durchlassspannung  
forward voltage  
IŒ = 1200 A, V•Š = 0 V  
IŒ = 1200 A, V•Š = 0 V  
TÝÎ = 25°C  
TÝÎ = 125°C  
2,80 3,50  
2,80 3,50  
V
V
VŒ  
Rückstromspitze  
peak reverse recovery current  
IŒ = 1200 A, - diŒ/dt = 6800 A/µs (TÝÎ=125°C) TÝÎ = 25°C  
TÝÎ = 125°C  
1700  
2000  
A
A
Vç = 1800 V  
V•Š = -15 V  
Iç¢  
Sperrverzögerungsladung  
recovered charge  
IŒ = 1200 A, - diŒ/dt = 6800 A/µs (TÝÎ=125°C) TÝÎ = 25°C  
Vç = 1800 V  
V•Š = -15 V  
710  
1300  
µC  
µC  
TÝÎ = 125°C  
QØ  
Abschaltenergie pro Puls  
reverse recovery energy  
IŒ = 1200 A, - diŒ/dt = 6800 A/µs (TÝÎ=125°C) TÝÎ = 25°C  
Vç = 1800 V  
V•Š = -15 V  
735  
1550  
mJ  
mJ  
TÝÎ = 125°C  
EØþÊ  
Innerer Wärmewiderstand  
thermal resistance, junction to case  
pro Diode / per diode  
RÚÌœ†  
RÚ̆™  
17,0 K/kW  
K/kW  
Übergangs-Wärmewiderstand  
thermal resistance, case to heatsink  
pro Diode / per diode  
/
12,0  
ð«ÈÙÚþ = 1 W/(m·K)  
ðÃØþÈÙþ = 1 W/(m·K)  
prepared by: Jürgen Biermann  
approved by: Thomas Schütze  
date of publication: 2009-01-20  
revision: 3.0  
1

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