Ordering number : ENN2817B
DBF20
Diffused Junction Silicon Diode
DBF20
2.0A Single-Phase Bridge Rectifier
Features
Package Dimensions
unit : mm
1202
•
Glass passivation for high reliability.
•
Plastic molded structure.
• Peak reverse voltage : V
=200, 600V.
RM
[DBF20]
• Average rectified current : I =2.0A.
O
20.0
3.5
C2.5
Electrical Connection
1.0
1.5
1.0
0.5
5.0
5.0
5.0
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Peak Reverse Voltage
Symbol
Conditions
DBF20C
DBF20G
Unit
V
V
200
600
RM
Average Recitified Current
I
O
Tc=114°C, with a 50✕50✕1.5mm3 Al fin
Ta=25°C, without fin
➝
➝
➝
➝
➝
2.0
1.5
A
A
Surge Forward Current
Junction Temperature
Storage Temperature
I
50Hz sine wave, 1 cycle
60
A
FSM
Tj
150
°C
°C
Tstg
--40 to +150
Electrical Characteristics at Ta=25°C
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
1.05
Forward Voltage
V
I =0.75A
F
V
F
Reverse Current
I
V
: At each V
RM
10
75
10
µA
R
R
Thermal Resistance(Junction-Ambient)
Thermal Resistance(Junction-Case)
Rth(j-a)
Rth(j-c)
without fin
°C/W
°C/W
with an Al fin
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Sem iconductor Com pany
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
41000 GI IM / 52098 HA (KT) / N118 TA, TS No.2817-1/3