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DBA100G PDF预览

DBA100G

更新时间: 2024-09-25 11:10:35
品牌 Logo 应用领域
安森美 - ONSEMI 局域网二极管
页数 文件大小 规格书
4页 184K
描述
10.0 A Single-Phase Bridge Rectifier

DBA100G 技术参数

是否无铅: 不含铅生命周期:Lifetime Buy
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.73
配置:BRIDGE, 4 ELEMENTS二极管类型:BRIDGE RECTIFIER DIODE
最大正向电压 (VF):1.1 VJESD-609代码:e4
最大非重复峰值正向电流:200 A元件数量:4
最高工作温度:150 °C最大输出电流:3.7 A
峰值回流温度(摄氏度):NOT SPECIFIED最大重复峰值反向电压:600 V
子类别:Bridge Rectifier Diodes表面贴装:NO
端子面层:Silver (Ag)处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

DBA100G 数据手册

 浏览型号DBA100G的Datasheet PDF文件第2页浏览型号DBA100G的Datasheet PDF文件第3页浏览型号DBA100G的Datasheet PDF文件第4页 
DBA100G  
10.0A Single-Phase Bridge Rectifier  
Features  
Plastic molded structure  
Glass passivation for high reliability  
www.onsemi.com  
Peak reverse voltage: V =600V  
RM  
Average rectified current: I =10.0A  
O
ELECTRICAL CONNECTION  
SPECIFICATIONS  
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C (Note 1)  
Parameter  
Symbol  
Value  
Unit  
V
V
Peak Reverse Voltage  
600  
3.7  
RM  
Average Rectified Current  
Ta = 40°C  
A
I
I
Average Rectified Current  
Ta = 40°C  
with 200 200 1.5mm Al fin  
Surge Forward Current  
Junction Temperature  
Storage Temperature  
O
10.0  
A
3
200  
150  
A
FSM  
T
C  
C  
j
Tstg  
30 to 150  
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage  
the device. If any of these limits are exceeded, device functionality should not  
be assumed, damage may occur and reliability may be affected.  
MARKING  
ORDERING INFORMATION  
See detailed ordering and shipping  
information on page 4 of this data sheet  
© Semiconductor Components Industries, LLC, 2016  
February 2016 - Rev. 1  
1
Publication Order Number :  
DBA100G/D  

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