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DB3X314F0L PDF预览

DB3X314F0L

更新时间： 2024-01-15 17:47:30
品牌 Logo 应用领域
松下 - PANASONIC 光电二极管
页数 文件大小 规格书
4页 492K
描述
Mixer Diode, L Band, Silicon, TO-236AA, HALOGEN FREE AND ROHS COMPLIANT, MINI3-G3-B, SC-59A, 3 PIN

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中文翻译

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DB3X314F0L 技术参数

是否Rohs认证： 符合生命周期：Transferred
包装说明：SC-59A, 3 PINReach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.60
风险等级：3.92Samacsys Description：DB3X314F0L, Schottky Diode, Switching 0.03A max, 30V 1ns Cathode-Anode, Dual, 3-Pin, Mini3 G3 B
配置：SERIES CONNECTED, CENTER TAP, 2 ELEMENTS二极管元件材料：SILICON
二极管类型：MIXER DIODE最大正向电压 (VF)：0.4 V
频带：L BANDJEDEC-95代码：TO-236AA
JESD-30 代码：R-PDSO-G3湿度敏感等级：1
元件数量：2端子数量：3
最高工作温度：85 °C最低工作温度：-40 °C
最大输出电流：0.03 A封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED最大重复峰值反向电压：30 V
子类别：Rectifier Diodes表面贴装：YES
技术：SCHOTTKY端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

DB3X314F0L 数据手册

 浏览型号DB3X314F0L的Datasheet PDF文件第2页浏览型号DB3X314F0L的Datasheet PDF文件第3页浏览型号DB3X314F0L的Datasheet PDF文件第4页 
DB3X314F  
Silicon epitaxial planar type  
Unit: mm  
For high speed switching circuits  
Features  
Short reverse recovery time trr  
Small reverse current IR  
Halogen-free / RoHS compliant  
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)  
ꢀMarking Symbol: 5C  
ꢀBasic Part Number  
Dual DB2J314 (Series)  
Packaging  
DB3X314F0L Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)  
1:Anode-1  
3: Cathode-1  
Anode-2  
Absolute Maximum Ratings Ta = 25°C  
2: Cathode-2  
Parameter  
Symbol  
VR  
Rating  
Unit  
V
Panasonic  
JEITA  
Mini3-G3-B  
SC-59A  
Reverse voltage  
30  
30  
Maximum peak reverse voltage  
VRM  
V
Code  
TO-236AA/SOT-23  
Single  
Series  
Single  
Series  
30  
mA  
mA  
mA  
mA  
°C  
Forward current  
IF  
20  
3
150  
Peak forward current  
IFM  
110  
Junction temperature  
Tj  
125  
1
2
Operating ambient temperature  
Storage temperature  
Topr  
–40 to +85  
–55 to +125  
°C  
T
stg  
°C  
Electrical Characteristics Ta = 25°C±3°C  
Parameter  
Symbol  
Conditions  
Min  
Typ  
Max  
Unit  
VF1  
VF2  
IR  
IF = 1 mA  
IF = 30 mA  
VR = 30 V  
0.4  
1.0  
Forward voltage  
Reverse current  
V
300  
nA  
pF  
ns  
Terminal capacitance  
Ct  
VR = 10 V, f = 1 MHz  
IF = IR =10 mA, Irr = 1 mA, RL = 100 Ω  
1.5  
1.0  
1
Reverse recovery time *  
trr  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.  
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage  
of current from the operating equipment.  
3. Absolute frequency of input and output is 2 GHz  
1: trr measurement circuit  
*
Input Pulse  
Output Pulse  
trr  
Bias Application Unit (N-50BU)  
tp  
tr  
t
10%  
IF  
t
A
90%  
VR  
Irr = 1 mA  
tp = 2 µs  
tr = 0.35 ns  
δ = 0.05  
IF = 10 mA  
IR = 10 mA  
RL = 100 Ω  
Pulse Generator  
Wave Form Analyzer  
(SAS-8130)  
Ri = 50 Ω  
(PG-10N)  
Rs = 50 Ω  
Publication date: April 2013  
Ver. DED  
1
1234

中文翻译

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DB3X314F0L 替代型号

型号 品牌 替代类型 描述 数据表
DB3X315E0L PANASONIC

完全替代

 Mixer Diode, L Band, Silicon, TO-236AA, HALOGEN FREE AND ROHS COMPLIANT, MINI3-G3-B, SC-59
MMBD101LT1G ONSEMI

功能相似

 Schottky Barrier Diodes
MMBD452LT1G ONSEMI

功能相似

 Dual Hot−Carrier Diodes Schottky Barrier Diodes

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