TH09/2479
IATF 0113686
TH97/2478
SGS TH07/1033
www.eicsemi.com
SILICON BI-DIRECTIONAL DIACS
DB3, DB4
DO - 35 Glass
(DO-204AH)
VBR : 32 - 40 Volts
1.00 (25.4)
0.079(2.0 )max.
min.
FEATURES :
0.150 (3.8)
max.
* VBR : 32 V and 40 V
* Low breakover current
* Pb / RoHS Free
1.00 (25.4)
0.020 (0.52)max.
min.
MECHANICAL DATA :
* Case: DO-35 Glass Case
* Weight: approx. 0.11g
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Ta = 25 °C)
RATING
DB3
28
DB4
35
SYMBOL
BR1 and VBR2 (Min.)
UNIT
V
Minimum Breakover Voltage
V
V
VBR1 and VBR2 (Typ.)
VBR1 and VBR2 (Max.)
I(BR)1 and I(BR)2
32
40
Typical Breakover Voltage
36
45
Maximum Breakover Voltage
V
Maximum Breakover Current
200
3.8
μA
V
[V(BR)1] - [V(BR)2
]
Maximum Breakover Voltage Symmetry
Minimum Dynamic Breakback Voltage
∆I = [IBR to IF = 10 mA]
5.0
±2
V
A
| ΔV ± |
Maximum Peak Current at Ta = 50 °C
(10 μs duration, 120 cycle repetition rate)
Maximum Peak output Voltage at Ta = 50 °C **
Thermal Impedance Junction to Ambient
Operating Junction Temperature Range
Storage Temperature Range
IP
eP
RӨJA
TJ
±3
V
°C/W
°C
60
- 40 to + 100
- 40 to + 150
TSTG
°C
**CIRCUIT FOR PEAK OUTPUT VOLTAGE TEST
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Rev. 03: December 7, 2006