Datasheet > DB2U30800L

DB2U30800L

更新时间： 2024-09-29 12:29:47

品牌	Logo	应用领域
松下 - PANASONIC		开关
页数	文件大小	规格书
4页	335K
描述
For high speed switching circuits DB27308 in USSMini2 type package

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中文翻译

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数据手册

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DB2U30800L 数据手册

DB2U308

Silicon epitaxial planar type

Unit: mm

For high speed switching circuits

DB27308 in USSMini2 type package

 Features

 Low forward voltage V_F

 Short reverse recovery time t_rr

 Halogen-free / RoHS compliant

(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)

ꢀMarking Symbol: 11

 Packaging

DB2U30800L Embossed type (Thermo-compression sealing): 10000 pcs / reel (standard)

 Absolute Maximum Ratings T_a= 25°C

1: Cathode

2:Anode

Parameter

Symbol

V_R

Rating

Unit

Reverse voltage

Panasonic

USSMini2-F2-B

Repetitive peak reverse voltage

Forward current (Average)

Peak forward current

V_RRM

I_F(AV)

I_FM

JEITA

Code

SC-116A

SOD-923

100

200

Non-repetitive peak forwardsurgecurrent^*

I_FSM

T_j

Junction temperature

125

°C

Operating ambient temperature

Storage temperature

T_opr

–40 to +85

–55 to +125

stg

Note) 1: 50 Hz sine wave 1 cycle (Non-repetitive peak current)

 Electrical Characteristics T_a= 25°C±3°C

Parameter

Symbol

V_F1

V_F2

I_R1

Conditions

Min

Typ

Max

0.29

0.42

Unit

I_F= 10 mA

I_F= 100 mA

V_R= 10 V

V_R= 30 V

Forward voltage

Reverse current

µA

I_R2

120

Terminal capacitance

Reverse recovery time ^*

C_t

V_R= 10 V, f = 1 MHz

2.9

1.3

t_rr

I_F= I_R= 100 mA, I_rr= 10 mA, R_L= 100 Ω

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage

of current from the operating equipment.

3. Absolute frequency of input and output is 250 MHz

1: t_rrmeasurement circuit

Input Pulse

Output Pulse

t_rr

Bias Application Unit (N-50BU)

t_p

t_r

10%

I_F

90%

V_R

I_rr= 10 mA

t_p= 2 µs

t_r= 0.35 ns

δ = 0.05

I_F= 100 mA

I_R= 100 mA

R_L= 100 Ω

Pulse Generator

Wave Form Analyzer

(SAS-8130)

R_i= 50 Ω

(PG-10N)

R_s= 50 Ω

Publication date: April 2013

Ver. CED

12 3 4

中文翻译

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与DB2U30800L相关器件

型号	品牌	获取价格	描述	数据表
DB2U309	PANASONIC	获取价格	Silicon epitaxial planar type For high speed switching circuits DB27309 in USSMini2 type p
DB2U30900L	PANASONIC	获取价格	Mixer Diode, Very High Frequency, Silicon, HALOGEN FREE AND ROHS COMPLIANT, USSMINI2-F2-B,
DB2U314	PANASONIC	获取价格	Mixer Diode, L Band, Silicon, HALOGEN FREE AND ROHS COMPLIANT, USSMINI2-F2-B, 2 PIN
DB2U31400L	PANASONIC	获取价格	Mixer Diode, L Band, Silicon, HALOGEN FREE AND ROHS COMPLIANT, USSMINI2-F2-B, SC-116A, 2 P
DB2U31600L	PANASONIC	获取价格	Mixer Diode, Very High Frequency, Silicon, HALOGEN FREE AND ROHS COMPLIANT, USSMINI2-F2-B,
DB2W318	PANASONIC	获取价格	Silicon epitaxial planar type
DB2W31800L	PANASONIC	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 30V V(RRM), Silicon, HALOGEN FREE AND R
DB2W319	PANASONIC	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 30V V(RRM), Silicon, ROHS COMPLIANT, MI
DB2W31900L	PANASONIC	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 30V V(RRM), Silicon, HALOGEN FREE AND R
DB2W401	PANASONIC	获取价格	For rectification DB24401 in Mini2 type package

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