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DB201

更新时间: 2024-11-19 09:59:55
品牌 Logo 应用领域
美微科 - MCC 二极管
页数 文件大小 规格书
3页 239K
描述
2.0 Amp Single Phase Bridge Rectifier 50 to 1000 Volts

DB201 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:R-PDIP-T4针数:4
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.65
其他特性:UL RECONIZED配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
JESD-30 代码:R-PDIP-T4JESD-609代码:e0
最大非重复峰值正向电流:60 A元件数量:4
相数:1端子数量:4
最大输出电流:2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:50 V表面贴装:NO
端子面层:TIN LEAD端子形式:THROUGH-HOLE
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

DB201 数据手册

 浏览型号DB201的Datasheet PDF文件第2页浏览型号DB201的Datasheet PDF文件第3页 
DB201  
THRU  
M C C  
TM  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
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Micro Commercial Components  
DB207  
Features  
RoHS Compliant. See ordering information)  
 4-PIN DIP Package and Low Profile Package  
 High Surge Current Capability  
Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates  
2.0 Amp Single Phase  
Bridge Rectifier  
50 to 1000 Volts  
 UL Recognized File # E165989  
·
·
Epoxy meets UL 94 V-0 flammability rating  
Moisture Sensitivity Level 1  
Maximum Ratings  
DB-1  
 Operating Temperature: -55C to +150C  
 Storage Temperature: -55C to +150C  
·
Thermal Resistance : Rthja: 40C/W;RthJL:15C/W.  
Notch  
MCC  
Part  
Number  
Maximum  
Recurrent  
Marking Peak Reverse  
Voltage  
Maximum  
RMS  
Voltage  
Maximum  
DC  
Blocking  
Voltage  
50V  
Device  
+
-
~
B
C
~
DB201  
DB202  
DB203  
DB204  
DB205  
DB206  
DB207  
DB201  
DB202  
DB203  
DB204  
DB205  
DB206  
DB207  
50V  
100V  
200V  
400V  
600V  
800V  
1000V  
35V  
70V  
100V  
200V  
A
140V  
280V  
420V  
560V  
700V  
400V  
600V  
E
D
800V  
1000V  
F
G
H
Electrical Characteristics @ 25C Unless Otherwise Specified  
Average Forward  
Current  
IF(AV)  
2.0 A  
TA = 40C  
DIMENSIONS  
Peak Forward Surge  
Current  
IFSM  
60A  
8.3ms, half sine  
MM  
INCHES  
Maximum  
Instantaneous  
Forward Voltage  
DIM  
A
B
C
D
E
F
G
H
MIN  
.316  
.245  
.300  
.236  
.102  
MAX  
.335  
.255  
.350  
.299  
.130  
MIN  
8.05  
6.20  
7.60  
6.01  
2.60  
MAX  
8.51  
6.50  
8.90  
7.60  
3.30  
NOTE  
VF  
1.1V  
IFM = 2.0A;  
TA = 25C  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
.060  
1.50  
Typ  
Typ  
IR  
10A  
0.5mA  
TJ = 25C  
TJ = 125C  
.016  
.195  
.022  
.205  
.041  
5.00  
.056  
5.20  
Typical Junction  
Capacitance  
CJ  
25pF  
Measured at  
1.0MHz, VR=4.0V  
Notes:1.High Temperature Solder Exemption Applied, see EU Directive Annex 7.  
www.mccsemi.com  
1 of 3  
Revision: A  
2011/01/01  

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