Datasheet > DB157S

DB157S

更新时间： 2024-09-24 12:50:39

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鲁光 - LGE		/
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2页	167K
描述
Silicon Bridge Rectifiers

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中文翻译

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技术参数
数据手册

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DB157S 技术参数

Package：	DBS	Maximum recurrent peak reverse voltage：	1000
Maximum average forward rectified current：	0.7	Peak forward surge current：	50
Maximum instantaneous forward voltage：	1	Maximum reverse current：	5
TJ(℃）：	-55～+150

DB157S 数据手册

DB151S-DB157S

Silicon Bridge Rectifiers

VOLTAGE RANGE: 50 --- 1000 V

CURRENT: 1.5 A

DB-S

Features

1± 0.1

Rating to 1000V PRV

7.9± 0.2

6.4± 0.1

Surge overload rating to 30 Amperes peak

Glass passivated chip junctions

1.2± 0.3

10± 0.6

Reliable low cost construction utilizing molded

plastic technique results in inexpensive product

8.3± 0.1

5± 0.2

Lead solderable per MIL-STD-202 method 208

Lead: silver plated copper, solderde plated

Plastic material has UL flammabilityclassification

94V-O

Dimensions in millimeters

Polaritysymbols molded on body

Weight: 0.016 ounces,0.45 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 ambient temperature unless otherwise specified.

Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by20%.

DB DB

151S 152S

UNITS

153S 154S 155S 156S 157S

Maximum recurrent peak reverse voltage

Maximum RMS voltage

100

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

V_RRM

V_RMS

V_DC

Maximum DC blocking voltage

Maximum average f orw ard

100

1000

1.5

I_F(AV)

Output current

@T_A=25

Peak forw ard surge current

8.3ms single half-sine-w ave

superimposed on rated load

I_FSM

Maximum instantaneous f orw ard voltage

at 1.5 A

1.1

V_F

I_R

Maximum reverse current

@T_A=25

10.0

1.0

at rated DC blocking voltage @T_A=100

Operating junction temperature range

Storage temperature range

m A

- 55 ---- + 150

T_J

T_STG

- 55 ---- + 150

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mail:lge@luguang.cn

中文翻译

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