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DB155S PDF预览

DB155S

更新时间: 2024-01-29 20:14:13
品牌 Logo 应用领域
鲁光 - LGE 二极管光电二极管
页数 文件大小 规格书
2页 167K
描述
Silicon Bridge Rectifiers

DB155S 数据手册

 浏览型号DB155S的Datasheet PDF文件第2页 
DB151S-DB157S  
Silicon Bridge Rectifiers  
VOLTAGE RANGE: 50 --- 1000 V  
CURRENT: 1.5 A  
DB-S  
Features  
1± 0.1  
Rating to 1000V PRV  
7.9± 0.2  
6.4± 0.1  
Surge overload rating to 30 Amperes peak  
Glass passivated chip junctions  
1.2± 0.3  
10± 0.6  
Reliable low cost construction utilizing molded  
plastic technique results in inexpensive product  
8.3± 0.1  
5± 0.2  
Lead solderable per MIL-STD-202 method 208  
Lead: silver plated copper, solderde plated  
Plastic material has UL flammabilityclassification  
94V-O  
Dimensions in millimeters  
Polaritysymbols molded on body  
Weight: 0.016 ounces,0.45 grams  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 ambient temperature unless otherwise specified.  
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by20%.  
DB DB  
151S 152S  
DB  
DB  
DB  
DB  
DB  
UNITS  
153S 154S 155S 156S 157S  
Maximum recurrent peak reverse voltage  
Maximum RMS voltage  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
VRRM  
VRMS  
VDC  
Maximum DC blocking voltage  
Maximum average f orw ard  
100  
1000  
1.5  
A
IF(AV)  
Output current  
@TA=25  
Peak forw ard surge current  
8.3ms single half-sine-w ave  
superimposed on rated load  
IFSM  
40  
A
V
Maximum instantaneous f orw ard voltage  
at 1.5 A  
1.1  
VF  
IR  
Maximum reverse current  
@TA=25  
10.0  
1.0  
μ
A
at rated DC blocking voltage @TA=100  
Operating junction temperature range  
Storage temperature range  
m A  
- 55 ---- + 150  
TJ  
TSTG  
- 55 ---- + 150  
http://www.luguang.cn  
mail:lge@luguang.cn  

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