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DB154S-C PDF预览

DB154S-C

更新时间: 2024-10-28 20:42:11
品牌 Logo 应用领域
RECTRON 光电二极管
页数 文件大小 规格书
3页 22K
描述
Bridge Rectifier Diode, 1 Phase, 1.5A, 400V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, DB-S, 4 PIN

DB154S-C 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:R-PDSO-G4
针数:4Reach Compliance Code:compliant
HTS代码:8541.10.00.80风险等级:5.59
其他特性:UL LISTED最小击穿电压:400 V
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODEJESD-30 代码:R-PDSO-G4
JESD-609代码:e3最大非重复峰值正向电流:60 A
元件数量:4相数:1
端子数量:4最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:1.5 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):265
认证状态:Not Qualified最大重复峰值反向电压:400 V
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

DB154S-C 数据手册

 浏览型号DB154S-C的Datasheet PDF文件第2页浏览型号DB154S-C的Datasheet PDF文件第3页 
DB151S  
THRU  
RECTRON  
SEMICONDUCTOR  
TECHNICAL SPECIFICATION  
DB1512S  
SINGLE-PHASE GLASS PASSIVATED  
SILICON BRIDGE RECTIFIER  
VOLTAGE RANGE 50 to 1200 Volts CURRENT 1.5 Ampere  
FEATURES  
* Surge overload rating - 60 amperes peak  
* Ideal for printed circuit board  
* Reliable low cost construction utilizing molded  
* Glass passivated device  
* Polarity symbols molded on body  
* Mounting position: Any  
DB-S  
* Weight: 1.0 gram  
(
)
)
.310 7.9  
MECHANICAL DATA  
(
.290 7.4  
*
Epoxy : Device has UL flammability classification 94V-0  
(
)
)
.255 6.5  
(
.245 6.2  
* UL listed the recognized component directory, file #E94233  
.009  
(
)
)
)
.013 .330  
(
)
0.229  
(
.003 .076  
(
)
)
.042 1.1  
(
.410 10.4  
(
.038 1.0  
(
)
.360 9.4  
(
)
.060 1.524  
(
)
.040 1.016  
(8.8)  
(7.8)  
.346  
.307  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 oC ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
(
)
)
.135 3.4  
(
.115 2.9  
(
)
)
.205 5.2  
(
.195 5.0  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS (At TA  
= 25oC unless otherwise noted)  
RATINGS  
SYMBOL  
DB151S DB152S DB153S DB154S DB155S DB156S DB157S DB1512S UNITS  
V
RRM  
RMS  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
1200  
840  
Volts  
Volts  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Bridge Input Voltage  
V
1200  
Volts  
Maximum DC Blocking Voltage  
V
DC  
100  
1000  
Maximum Average Forward Output Current at T  
A
=
40oC  
I
O
Amps  
1.5  
60  
Peak Forward Surge Current 8.3 ms single half sine-wave  
superimposed on rated load (JEDEC method)  
I
FSM  
Amps  
R θ J A  
R θ J L  
Typical thermal resistance  
40  
15  
0C/ W  
0 C  
TJ,TSTG  
Operating and Storage Temperature Range  
-55 to + 150  
ELECTRICAL CHARACTERISTICS (At T  
A
= 25oC unless otherwise noted)  
SYMBOL  
CHARACTERISTICS  
DB151S DB152S DB153S DB154S DB155S DB156S DB157S DB1512S UNITS  
Maximum Forward Voltage Drop per Bridge  
Element at 1.5A DC  
V
F
1.1  
Volts  
uAmps  
mAmps  
2003-5  
5.0  
0.5  
Maximum Reverse Current at rated  
DC Blocking Voltage per element  
@T  
A
A
= 25oC  
= 125oC  
I
R
@T  
NOTE: Suffix “-s” Surface Mount for Dip Bridge.  

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