Datasheet > DB152S

DB152S

更新时间： 2023-12-06 20:01:20

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
3页	991K
描述
DBS

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中文翻译

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数据手册

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DB152S 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

DBS Plastic-Encapsulate Bridge Rectifier

General Purpose Bridge Rectifier

DB151S THRU DB157S

Features

DBS

●I_F(AV)

1.5A

●VRRM

50V-1000V

●High surge current capability

●

Glass passivated chip

Applications

●

General purpose 1 phase Bridge

rectifier applications

Marking

● DB15XS

X From 1 To 7

DB15

Item

Symbol Unit

Conditions

2S 3S

5S 6S 7S

Repetitive Peak Reverse

Voltage

V_RRM

100 200 400 600 800 1000

140 280 420 560 700

Maximum

Voltage

RMS

Average Rectified Output

Current

I_O

60Hz sine wave,

R-load ,Ta=25℃

1.5

Surge(Non-

repetitive)Forward Current

I_FSM

I²t

half

60H_Z

sine wave, 1 cycle, T_j=25℃

A²S

Current Squared Time

1ms≤t<8.3ms Tj=25℃，Rating of per diode

Operation Junction and

Storage Temperature Range

℃

T_J,T_stg

-55 ~+150

Electrical Characteristics（T_a=25℃ Unless otherwise specified）

Max

Symbol Unit

Test Condition

Item

I_FM=1.5A, Pulse measurement, Rating of per diode

V_FM

1.1

Peak Forward Voltage

I_RRM

_RM=V_RRM, Pulse measurement, Rating of per diode

Peak Reverse Current

μA

θJ-A

Between junction and ambient

℃/W

Thermal Resistance

J-L

Between junction and lead

www.jscj-elec.com

Rev. - 1.1

12 3

中文翻译

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