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DB152S PDF预览

DB152S

更新时间: 2024-02-29 14:36:37
品牌 Logo 应用领域
ASEMI 二极管
页数 文件大小 规格书
2页 139K
描述
1.5 A Single-Phase Glass Passivated Bridge Rectifiers

DB152S 技术参数

生命周期:Active包装说明:R-PDSO-G4
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.61其他特性:UL LISTED
最小击穿电压:100 V配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
JESD-30 代码:R-PDSO-G4最大非重复峰值正向电流:60 A
元件数量:4相数:1
端子数量:4最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:1.5 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE最大重复峰值反向电压:100 V
表面贴装:YES端子形式:GULL WING
端子位置:DUALBase Number Matches:1

DB152S 数据手册

 浏览型号DB152S的Datasheet PDF文件第2页 
DB101S thru DB107S  
1.0 A Single-Phase Glass Passivated Bridge Rectifiers  
Rectifier Reverse Voltage 50 to 1000V  
DB-S  
_
Features  
+
+
6.35 0.15  
This series is UL listed under the Recognized  
Component Index, file number E142814  
+
7.65 0.25  
~ ~  
The plastic material used carries Underwriters Laboratory  
flammability recognition 94V-0  
Surge overload ratings to 50 amperes  
Ideal for printed circuit board application  
High temperature soldering guaranteed 265 C /10  
seconds at 5 lbs (2.3kg) tension  
+
8.32 0.19  
+
0.15  
2.35  
Mechanical Data  
+
0.2 0.15  
+
1.01 0.13  
Case: Molded plastic  
+
1.28 0.15  
Terminals: Plated leads solderable per MIL-STD-202,  
Method 208  
+
5.1 0.1  
10.4 Max.  
Polarity: Marked on body  
Mounting Position: Any  
Weight: 0.04 ounce, 1.0 grams (approx)  
Dimensions in millimeters ( 1mm =0.0394" )  
Maximum Ratings & Thermal Characteristics  
Rating at 25 C ambient temperature unless otherwise specified, Resistive or Inductive load, 60 Hz.  
For Capacitive load derate current by 20%.  
DB101S DB102S DB103S DB104S DB105S DB106S DB107S  
Parameter  
Symbol  
VRRM  
VRMS  
VDC  
unit  
V
Maximum repetitive peak reverse voltage  
Maximum RMS bridge input voltage  
Maximum DC blocking voltage  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
100  
1000  
Maximum average forward rectified  
output current at TA=40 C  
IF(AV)  
1.0  
A
Peak forward surge current single sine-wave  
superimposed on rated load (JEDEC Method)  
50  
A
IFSM  
2
2
I t  
sec  
A
Rating for fusing ( t<8.3ms)  
10  
110  
25.0  
C / W  
pF  
Typical thermal resistance per element (1)  
Typical junction capacitance per element (2)  
ReJA  
Cj  
TJ,  
Operating junction and storage temperature  
range  
C
-55 to + 150  
TSTG  
Electrical Characteristics  
Rating at 25 C ambient temperature unless otherwise specified. Resistive or Inductive load, 60Hz.  
For Capacitive load derate by 20 %.  
DB101S DB102S DB103S DB104S DB105S DB106S DB107S  
Parameter  
Symbol  
Unit  
Maximum instantaneous forward voltage drop  
per leg at 1.0A  
1.1  
VF  
V
10  
Maximum DC reverse current at rated TA =25 C  
A
IR  
500  
DC blocking voltage per element  
TA =125 C  
Notes: (1)Thermal resistance from Junction to Ambemt on P.C.board mounting.  
(2)Measured at 2.0MHz and applied reverse voltage of 4.0 volts.  
www.asemi.tw  

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