Datasheet > DB151S

DB151S

更新时间： 2024-09-23 04:14:07

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		二极管光电二极管
页数	文件大小	规格书
2页	74K
描述
SILICON BRIDGE RECTIFIERS

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中文翻译

获取价格

数据手册

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DB151S 数据手册

GALAXY ELECTRICAL

DB151S---DB157S

VOLTAGE RANGE: 50 --- 1000 V

CURRENT: 1.5 A

SILICON BRIDGE RECTIFIERS

FEATURES

Rating to 1000V PRV

DB-S

Surge overload rating to 30 Amperes peak

Glass passivated chip junctions

1± 0.1

7.9± 0.2

6.4± 0.1

Reliable low cost construction utilizing molded

plastic technique results in inexpensive product

1.2± 0.3

10± 0.6

Lead solderable per MIL-STD-202 method 208

Lead: silver plated copper, solderde plated

8.3± 0.1

5± 0.2

Plastic material has UL flammabilityclassification

94V-O

Polaritysymbols molded on body

Weight: 0.016 ounces,0.45 grams

Dimensions in millimeters

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 ambient temperature unless otherwise specified.

Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by20%.

UNITS

151S 152S

153S 154S 155S 156S 157S

Maximum recurrent peak reverse voltage

Maximum RMS voltage

100

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

V_RRM

V_RMS

V_DC

Maximum DC blocking voltage

Maximum average f orw ard

100

1000

1.5

I_F(AV)

Output current

@T_A=25

Peak forw ard surge current

8.3ms single half-sine-w ave

superimposed on rated load

I_FSM

Maximum instantaneous f orw ard voltage

at 1.5 A

1.1

V_F

I_R

Maximum reverse current

@T_A=25

10.0

1.0

at rated DC blocking voltage @T_A=100

Operating junction temperature range

Storage temperature range

m A

- 55 ---- + 150

T_J

T_STG

- 55 ---- + 150

www.galaxycn.com

BLGALAXY ELECTRICAL

Document Number 0287004

中文翻译

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