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DB102S PDF预览

DB102S

更新时间: 2024-01-27 04:27:04
品牌 Logo 应用领域
ASEMI 二极管
页数 文件大小 规格书
2页 139K
描述
1.0A Single-Phase Glass Passivated Bridge Rectifiers

DB102S 技术参数

生命周期:Obsolete包装说明:R-PDIP-W4
针数:4Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.57
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODEJESD-30 代码:R-PDIP-W4
元件数量:4相数:1
端子数量:4封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
认证状态:Not Qualified表面贴装:NO
端子形式:WIRE端子位置:DUAL
Base Number Matches:1

DB102S 数据手册

 浏览型号DB102S的Datasheet PDF文件第2页 
DB101S thru DB107S  
1.0 A Single-Phase Glass Passivated Bridge Rectifiers  
Rectifier Reverse Voltage 50 to 1000V  
DB-S  
_
Features  
+
+
6.35 0.15  
This series is UL listed under the Recognized  
Component Index, file number E142814  
+
7.65 0.25  
~ ~  
The plastic material used carries Underwriters Laboratory  
flammability recognition 94V-0  
Surge overload ratings to 50 amperes  
Ideal for printed circuit board application  
High temperature soldering guaranteed 265 C /10  
seconds at 5 lbs (2.3kg) tension  
+
8.32 0.19  
+
0.15  
2.35  
Mechanical Data  
+
0.2 0.15  
+
1.01 0.13  
Case: Molded plastic  
+
1.28 0.15  
Terminals: Plated leads solderable per MIL-STD-202,  
Method 208  
+
5.1 0.1  
10.4 Max.  
Polarity: Marked on body  
Mounting Position: Any  
Weight: 0.04 ounce, 1.0 grams (approx)  
Dimensions in millimeters ( 1mm =0.0394" )  
Maximum Ratings & Thermal Characteristics  
Rating at 25 C ambient temperature unless otherwise specified, Resistive or Inductive load, 60 Hz.  
For Capacitive load derate current by 20%.  
DB101S DB102S DB103S DB104S DB105S DB106S DB107S  
Parameter  
Symbol  
VRRM  
VRMS  
VDC  
unit  
V
Maximum repetitive peak reverse voltage  
Maximum RMS bridge input voltage  
Maximum DC blocking voltage  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
100  
1000  
Maximum average forward rectified  
output current at TA=40 C  
IF(AV)  
1.0  
A
Peak forward surge current single sine-wave  
superimposed on rated load (JEDEC Method)  
50  
A
IFSM  
2
2
I t  
sec  
A
Rating for fusing ( t<8.3ms)  
10  
110  
25.0  
C / W  
pF  
Typical thermal resistance per element (1)  
Typical junction capacitance per element (2)  
ReJA  
Cj  
TJ,  
Operating junction and storage temperature  
range  
C
-55 to + 150  
TSTG  
Electrical Characteristics  
Rating at 25 C ambient temperature unless otherwise specified. Resistive or Inductive load, 60Hz.  
For Capacitive load derate by 20 %.  
DB101S DB102S DB103S DB104S DB105S DB106S DB107S  
Parameter  
Symbol  
Unit  
Maximum instantaneous forward voltage drop  
per leg at 1.0A  
1.1  
VF  
V
10  
Maximum DC reverse current at rated TA =25 C  
A
IR  
500  
DC blocking voltage per element  
TA =125 C  
Notes: (1)Thermal resistance from Junction to Ambemt on P.C.board mounting.  
(2)Measured at 2.0MHz and applied reverse voltage of 4.0 volts.  
www.asemi.tw  

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