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DB101S PDF预览

DB101S

更新时间: 2023-12-06 20:00:24
品牌 Logo 应用领域
江苏长电/长晶 - CJ /
页数 文件大小 规格书
3页 949K
描述
DBS

DB101S 数据手册

 浏览型号DB101S的Datasheet PDF文件第2页浏览型号DB101S的Datasheet PDF文件第3页 
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CCOO..,, LLTTDD  
DBS Plastic-Encapsulate Bridge Rectifier  
General Purpose Bridge Rectifier  
DB101S THRU DB107S  
Features  
●IF(AV)  
1A  
DBS  
●VRRM  
50V-1000V  
●High surge current capability  
Glass passivated chip  
Applications  
General purpose 1 phase Bridge  
rectifier applications  
Marking  
DB10XS  
:
X From 01 To 7  
DB1  
01S 02S 03S 04S 05S 06S 07S  
Item  
Symbol Unit  
Conditions  
Repetitive Peak Reverse  
Voltage  
VRRM  
V
V
50  
35  
100 200 400 600 800 1000  
70 140 280 420 560 700  
V
Maximum  
Voltage  
RMS  
RMS  
Average Rectified Output  
Current  
60Hz sine wave,  
IO  
A
R-load ,Ta=25℃  
1.0  
Surge(Non-  
repetitive)Forward Current  
IFSM  
I2t  
A
half  
60HZ  
sine wave, 1 cycle, Tj=25℃  
30  
A2S  
Current Squared Time  
1mst<8.3ms Tj=25℃,Rating of per diode  
3.7  
Operation Junction and  
Storage Temperature Range  
TJ,Tstg  
-55 ~+150  
Electrical CharacteristicsTa=25Unless otherwise specified)  
Max  
Symbol Unit  
Test Condition  
Item  
IFM=0.5A, Pulse measurement, Rating of per diode  
VFM  
V
1.05  
Peak Forward Voltage  
IRRM  
V
RM=VRRM , Pulse measurement, Rating of per diode  
10  
68  
Peak Reverse Current  
Thermal Resistance  
μA  
R
θJ-A  
Between junction and ambient  
Between junction and lead  
/W  
R
θ
J-L  
15  
www.jscj-elec.com  
1
Rev. - 1.1  

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