Datasheet > DB101G

DB101G

更新时间： 2023-12-06 20:02:26

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
2页	179K
描述
桥式整流管

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中文翻译

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数据手册

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DB101G 数据手册

DB101G~DB107G

Single-Phase Glass Passivated Silicon Bridge Rectifier

Reverse Voltage - 50 to 1000 V

Forward Current - 1 A

Features

• Glass passivated chip junction

• Ideal for printed circuit board

• Low forward voltage drop,high current capability

Mechanical Data

• Case: Molded plastic, DB

• Epoxy: UL 94V-0 rate flame retardant

• Terminals: Plated leads solderable per MIL-STD-750,

Method 2026

• Mounting position: Any

Absolute Maximum Ratings and Characteristics

Ratings at 25 C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or

inductive load. For capacitive load, derate current by 20%.

Symbols DB101G DB102G DB103G DB104G DB105G DB106G DB107G Units

Parameter

Marking

V_RRM

V_RMS

V_DC

DB101G DB102G DB103G DB104G DB105G DB106G DB107G

100 200 400 600 800 1000

70 140 280 420 560 700

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

100 200 400 600 800 1000

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current at T_a= 40℃

I_(AV)

Peak Forward Surge Current 8.3 ms Single Half-sine-wave

Superimposed on Rated Load (JEDEC Method)

I_FSM

V_F

I_R

Maximum Forward Voltage at 1 A

1.1

Maximum Reverse Current at Rated

DC Blocking Voltage

at T_j= 25℃

µA

at T_j= 125℃

500

I²t Rating for Fusing (t < 8.3 ms)

Typical Junction Capacitance ¹⁾

Typical Thermal Resistance ²⁾

I²t

C_J

10.4

A²s

R_θJA

℃/W

℃

Operating and Storage Temperature Range

T_j, T_stg

-55 to +150

¹⁾Measured at 1 MHz and applied reverse voltage of 4 V.

²⁾Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B with 0.5 X 0.5" (13 X 13 mm) copper pads.

1 / 2

Dated: 24/05/2021 SS Rev: 02

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