Datasheet > DAN2222E

DAN2222E

更新时间： 2024-01-17 18:51:09

品牌	Logo	应用领域
江苏长电/长晶 - CJ		二极管开关
页数	文件大小	规格书
3页	301K
描述
SWITCHING DIODE

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中文翻译

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数据手册

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DAN2222E 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

WBFBP-03A Plastic-Encapsulate Diode

WBFBP-03A

(1.6×1.6×0.5)

unit: mm

TOP

DAN222E

SWITCHING DIODE

DESCRIPTION

1. ANODE

Epitaxial planar Silicon diode

2. ANODE

3.CATHODE

BACK

FEATURES:

High speed. (trr=1.5ns Typ.)

Suitable for high packing density layout

High reliability.

APPLICATION

Ultra high speed switching

For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,

DVD-ROM, Note book PC, etc.)

MARKING: N

Maximum Ratings and Electrical Characteristics, Single Diode @T_A=25 ℃

Parameter

Symbol

V_RM

V_R

Limits

Unit

Peak reverse voltage

DC reverse voltage

Maximum (peak) forward current

Average forward current

Power dissipation

I_FM

300

℃

I_O

100

P_D

150

Junction temperature

Storage temperature

T_j

150

T_stg

-55-150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃

unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

MAX

UNIT

Reverse breakdown voltage

V_(BR)

I_R

I_R= 100µA

Reverse voltage leakage current

V_R=70V

0.1

1.2

µA

Forward voltage

V_F

I_F=100mA

Diode capacitance

C_D

t_rr

V_R=6V, f=1MHz

V_R=6V, I_F=5mA

3.5

Reverse recovery time

12 3

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